Lattice damage in InGaN induced by swift heavy ion irradiation

doi:10.1088/1674-1056/ac7ccd

Abstract The microstructural responses of In_0.32Ga_0.68N and In_0.9Ga_0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In_0.9Ga_0.1N is more susceptible to irradiation than the Ga-rich In_0.32Ga_0.68N. Xe ion irradiation with a fluence of 7× 10¹¹ ions·cm^-2 leads to little damage in In_0.32Ga_0.68N but an obvious lattice expansion in In_0.9Ga_0.1N. The level of lattice disorder in In_0.9Ga_0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In_0.9Ga_0.1N.

Keywords: InGaN swift heavy ions irradiation effects

Received: 05 May 2022
Revised: 24 June 2022
Accepted manuscript online:

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	78.66.Fd	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11875154) and State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2014).

Corresponding Authors: Li-Min Zhang
E-mail: zhanglm@lzu.edu.cn

Cite this article:

Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞) Lattice damage in InGaN induced by swift heavy ion irradiation 2022 Chin. Phys. B 31 106103

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Lattice damage in InGaN induced by swift heavy ion irradiation

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