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Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates |
Chen Long (陈龙)a b, Payne Justin (裴嘉鼎)b, Strate Jan (史达特)b, Li Cheng (李成)b, Zhang Jian-Ming (张建明)b, Yu Wen-Jie (俞文杰)a, Di Zeng-Feng (狄增峰)a, Wang Xi (王曦)a |
a State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Shanghai Simæra Incorporated, Shanghai 201800, China |
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Abstract Semi-polar (1-101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting 111 planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1-101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.
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Received: 06 May 2015
Revised: 04 July 2015
Accepted manuscript online:
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PACS:
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81.05.Ea
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(III-V semiconductors)
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78.60.Fi
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(Electroluminescence)
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Corresponding Authors:
Chen Long
E-mail: long@simaera.com
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Cite this article:
Chen Long (陈龙), Payne Justin (裴嘉鼎), Strate Jan (史达特), Li Cheng (李成), Zhang Jian-Ming (张建明), Yu Wen-Jie (俞文杰), Di Zeng-Feng (狄增峰), Wang Xi (王曦) Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates 2015 Chin. Phys. B 24 118102
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