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Chin. Phys. B, 2015, Vol. 24(11): 118102    DOI: 10.1088/1674-1056/24/11/118102
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long (陈龙)a b, Payne Justin (裴嘉鼎)b, Strate Jan (史达特)b, Li Cheng (李成)b, Zhang Jian-Ming (张建明)b, Yu Wen-Jie (俞文杰)a, Di Zeng-Feng (狄增峰)a, Wang Xi (王曦)a
a State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Shanghai Simæra Incorporated, Shanghai 201800, China
Abstract  Semi-polar (1-101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting 111 planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1-101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.
Keywords:  metalorganic chemical vapor deposition      semipolar      light emitting diodes  
Received:  06 May 2015      Revised:  04 July 2015      Accepted manuscript online: 
PACS:  81.05.Ea (III-V semiconductors)  
  78.60.Fi (Electroluminescence)  
Corresponding Authors:  Chen Long     E-mail:  long@simaera.com

Cite this article: 

Chen Long (陈龙), Payne Justin (裴嘉鼎), Strate Jan (史达特), Li Cheng (李成), Zhang Jian-Ming (张建明), Yu Wen-Jie (俞文杰), Di Zeng-Feng (狄增峰), Wang Xi (王曦) Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates 2015 Chin. Phys. B 24 118102

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