1 State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China; 2 State Key Laboratory of ASIC and System, Center of Micro-Nano System, SIST, Fudan University, Shanghai 200433, China; 3 Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China; 4 Department of Physics, Chemistry and Biology(IFM), Linköping University, Linköping SE-581 83, Sweden; 5 School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
Abstract To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage (C-V) characterization of organic thin films when current injection is significant, a three-element equivalent circuit model is proposed. On this basis, the expression of real capacitance in consideration of current injection is theoretically derived by small-signal analysis method. The validity of the proposed equivalent circuit and theoretical expression are verified by a simulating circuit consisting of a capacitor, a diode, and a resistor. Moreover, the accurate C-V characteristic of an organic thin film device is obtained via theoretical correction of the experimental measuring result, and the real capacitance is 35.7% higher than the directly measured capacitance at 5-V bias in the parallel mode. This work strongly demonstrates the necessity to consider current injection in C-V measurement and provides a strategy for accurate C-V characterization experimentally.
Ming Chu(褚明), Shao-Bo Liu(刘少博), An-Ran Yu(蔚安然), Hao-Miao Yu(于浩淼), Jia-Jun Qin(秦佳俊), Rui-Chen Yi(衣睿宸), Yuan Pei(裴远), Chun-Qin Zhu(朱春琴), Guang-Rui Zhu(朱光瑞), Qi Zeng(曾琪), and Xiao-Yuan Hou(侯晓远) Accurate capacitance-voltage characterization of organic thin films with current injection 2021 Chin. Phys. B 30 087301
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