CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric |
Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富)†, Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
|
|
Abstract The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-$\kappa$ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-$\kappa$ organic dielectric.
|
Received: 26 January 2010
Revised: 10 May 2010
Accepted manuscript online:
|
PACS:
|
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
|
73.61.Ey
|
(III-V semiconductors)
|
|
77.22.Ch
|
(Permittivity (dielectric function))
|
|
77.55.+f
|
|
|
85.30.Tv
|
(Field effect devices)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50932002), the Youth Foundation (Grant No. L08010301JX0805) and Start-up Foundation of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China (Grant No. A09010301GG-01). |
Cite this article:
Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric 2010 Chin. Phys. B 19 107305
|
[1] |
Zhong F, Li X H, Qiu K, Yin Z J, Ji C J, Cao X C, Han Q F, Chen J R and Wang Y Q 2007 Chin. Phys. 16 2786
|
[2] |
Torabi A, Ericson P, Yarranton E J and Hoke W E 2002 J. Vac. Sci. Technol. B 20 1234
|
[3] |
Guo B Z, Gong N and Yu F Q 2008 Chin. Phys. B 17 290
|
[4] |
Stolichnov I, Malin L, Muralt P and Setter N 2006 Appl. Phys. Lett. 88 043512
|
[5] |
Hashizume T, Ootomo S and Hasegawa H 2003 Appl. Phys. Lett. 83 2952
|
[6] |
Tan W S, Houston P A, Parbrook P J, Hill G and Airey R J 2002 J. Phys. D: Appl. Phys. 35 595
|
[7] |
Arulkumaran S, Egawa T, Ishikawa H, Jimbo T and Sano Y 2004 Appl. Phys. Lett. 84 613
|
[8] |
Bougrioua Z, Azize M, Lorenzini P, Laügt M and Haas H 2005 Phys. Stat. Sol. (a) 202 536
|
[9] |
Jena D and Konar A 2007 Phys. Rev. Lett. 98 136805
|
[10] |
Chen F, Xia J L, Ferry D K and Tao N J 2009 Nano Lett. 9 2571 endfootnotesize
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|