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Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer |
Wei Li(李维)1, Peng Jin(金鹏)2, Wei-Ying Wang(王维颖)2, De-Feng Mao(毛德丰)2, Xu Pan(潘旭)2, Xiao-Liang Wang(王晓亮)2, Zhan-Guo Wang(王占国)2 |
1 Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement, Aviation Industry Corporation of China, Beijing 100095, China;
2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100095, China |
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Abstract AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.
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Received: 03 January 2017
Revised: 08 April 2017
Accepted manuscript online:
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PACS:
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78.55.Cr
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(III-V semiconductors)
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78.47.jd
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(Time resolved luminescence)
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Fund: Project supported by the National Key Research and Development Program of China (Grant No.2016YFB0400101) and Beijing Science and Technology Project,China (Grant No.Z151100003315024). |
Corresponding Authors:
Peng Jin
E-mail: pengjin@semi.ac.cn
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Cite this article:
Wei Li(李维), Peng Jin(金鹏), Wei-Ying Wang(王维颖), De-Feng Mao(毛德丰), Xu Pan(潘旭), Xiao-Liang Wang(王晓亮), Zhan-Guo Wang(王占国) Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer 2017 Chin. Phys. B 26 077802
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