Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy
Hu Yi-Fan (胡一帆)a, Beling C. D.b
a Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Physics, University of Hong Kong,Hong Kong, China
Abstract Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This ``rectifying'' effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit (VEPF) analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.
Received: 14 December 2004
Revised: 23 March 2005
Accepted manuscript online:
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Cite this article:
Hu Yi-Fan (胡一帆), Beling C. D. Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy 2005 Chinese Physics 14 2293
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