UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ：PC71BM photovoltaic devices

doi:10.1088/1674-1056/23/3/038405

Abstract The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC₇₁BM) as the acceptor, in solution-processed organic photovoltaic devices is obtained by using UV-ozone-treated MoO₃ as the hole-collecting buffer layer. The optimized thickness of the MoO₃ layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO₃ film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm²) is obtained.

Keywords: organic photovoltaic devices hole-collecting buffer layer MoO₃ UV-ozone

Received: 24 July 2013
Revised: 01 September 2013
Accepted manuscript online:

PACS:	84.60.Jt	(Photoelectric conversion)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	88.40.hj	(Efficiency and performance of solar cells)
	88.40.jr	(Organic photovoltaics)

Fund: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120009130005), and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2012JBZ001).

Corresponding Authors: Zhao Su-Ling, Huang Yan
E-mail: slzhao@bjtu.edu.cn;huangyan@scu.edu.cn

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Yang Qian-Qian (杨倩倩), Yang Dao-Bin (杨道宾), Zhao Su-Ling (赵谡玲), Huang Yan (黄艳), Xu Zheng (徐征), Gong Wei (龚伟), Fan Xing (樊星), Liu Zhi-Fang (刘志方), Huang Qing-Yu (黄清雨), Xu Xu-Rong (徐叙瑢) UV-ozone-treated MoO₃ as the hole-collecting buffer layer for high-efficiency solution-processed SQ：PC₇₁BM photovoltaic devices 2014 Chin. Phys. B 23 038405

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UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ：PC71BM photovoltaic devices

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UV-ozone-treated MoO₃ as the hole-collecting buffer layer for high-efficiency solution-processed SQ：PC₇₁BM photovoltaic devices