INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Blue InGaN light-emitting diodes with dip-shaped quantum wells |
Lu Tai-Ping(卢太平)a), Li Shu-Ti(李述体) a)†, Zhang Kang(张康)a), Liu Chao(刘超)a), Xiao Guo-Wei(肖国伟) b), Zhou Yu-Gang(周玉刚)b), Zheng Shu-Wen(郑树文)a), Yin Yi-An(尹以安)a), Wu Le-Juan(仵乐娟)a), Wang Hai-Long(王海龙)a), and Yang Xiao-Dong(杨孝东)a) |
a Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China; b APT Electronics Ltd, Nansha District, Guangzhou 511458, China |
|
|
Abstract InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).
|
Received: 06 April 2011
Revised: 31 May 2011
Accepted manuscript online:
|
PACS:
|
85.60.Jb
|
(Light-emitting devices)
|
|
87.15.A-
|
(Theory, modeling, and computer simulation)
|
|
78.60.Fi
|
(Electroluminescence)
|
|
73.61.Ey
|
(III-V semiconductors)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191). |
Cite this article:
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) Blue InGaN light-emitting diodes with dip-shaped quantum wells 2011 Chin. Phys. B 20 108504
|
[1] |
Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
|
[2] |
Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T and Park Y 2008 Appl. Phys. Lett. 93 041102
|
[3] |
Kuo Y K, Tsai M C and Yen S H 2009 Opt. Commun. 282 4252
|
[4] |
Tao Y B, Chen Z Z, Zhang F F, Jia C Y, Qi S L, Yu T J, Kang X N, Yang Z J, You L P, Yu D P and Zhang G Y 2010 J. Appl. Phys. 107 103529
|
[5] |
Chang S P, Lu T C, Zhuo L F, Jang C Y, Lin D W, Yang H C, Kuo H C and Wang S C 2010 J. Electrochem. Soc. 157 H501
|
[6] |
Ling S C, Lu T C, Chang S P, Chen J R, Kuo H C and Wang S C 2010 Appl. Phys. Lett. 96 231101
|
[7] |
Paskova T 2008 Phys. Status Solidi 245 1011
|
[8] |
Chakraborty A, Haskell B A, Keller S, Speck J S, DenBaars S P, Nakamura S and Mishra U K 2004 Appl. Phys. Lett. 85 5143
|
[9] |
Kojima K, Funato M, Kawakami Y, Masui S, Nagahama S and Mukai T 2007 Appl. Phys. Lett. 91 251107
|
[10] |
Brinkley S E, Lin Y D, Chakraborty A, Pfaff N, Cohen D, Speck J S, Nakamura S and DenBaars S P 2011 Appl. Phys. Lett. 98 011110
|
[11] |
Choi R J, Hahn Y B, Shim H W, Han M S, Suh E K and Lee H J 2003 Appl. Phys. Lett. 82 2764
|
[12] |
Liao C T, Tsai M C, Liou B T, Yen S H and Kuo Y K 2010 J. Appl. Phys. 108 063107
|
[13] |
Arif R A, Ee Y K and Tansu N 2007 Appl. Phys. Lett. 91 091110
|
[14] |
Zhao H P, Liu G Y, Li X H, Huang G S, Poplawsky J D, Penn S T, Dierolf V and Tansu N 2009 Appl. Phys. Lett. 95 061104
|
[15] |
Han S H, Lee D Y, Shim H W, Kim G C, Kim Y S, Kim S T, Lee S J, Cho C Y and Park S J 2010 J. Phys. D 43 354004
|
[16] |
Park S H, Ahn D, Koo B H and Kim J W 2009 Appl. Phys. Lett. 95 063507
|
[17] |
Zhao H, Arif R A and Tansu N 2009 IEEE J. Sel. Top. Quantum Electron. 15 1104
|
[18] |
APSYS by Crosslight Software Inc., Burnaby, Canada (http://www.crosslight.com)
|
[19] |
Stringfellow G B and Craford M G 1997 High Brightness Light Emitting Diodes (San Diego: CA Academic) p. 412
|
[20] |
Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|