a Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China; b State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; c School of Materials, Changchun University of Science and Technology, Changchun 130022, Chinac School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China
Abstract InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 700 and 900${^\circ}$C, both the red-shift and the blue-shift of the photoluminescence (PL) peak, the decreased and the enhancement of the PL intensity were observed. The transmission electron microscopic images showed that InGaN multi-quantum-dots-like (MQD-like) structures with dimensions less than 5$\times$10nm were formed in InGaN wells. The changes of PL spectra could be tentatively attributed to the competition between the red-shift mechanism of the quantum-confined Stark effect and the blue-shift mechanism of the quantum size effect due to MQD-like structures.
Received: 14 May 2004
Revised: 17 December 2004
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60376005 and 60276010),the Natural Science Foundation of Guangdong Province, China (Grant No04300863), the Postdoctoral Foundation of China (Grant No2004036356) and the Keystone Programme of Guangdong Province, China(No ZB2003A07)
Cite this article:
Li Zhong-Hui (李忠辉), Yu Tong-Jun (于彤军), Yang Zhi-Jian (杨志坚), Feng Yu-Chun (冯玉春), Zhang Guo-Yi (张国义), Guo Bao-Ping (郭宝平), Niu Han-Ben (牛憨笨) Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN 2005 Chinese Physics 14 830
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