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Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage |
| Lijian Guo(郭力健), Weizong Xu(徐尉宗)†, Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海)‡ |
| School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
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Abstract By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode (SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current-voltage (I-V) tests and electroluminescence spectra. Meanwhile, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.
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Received: 19 April 2022
Revised: 23 June 2022
Accepted manuscript online: 18 July 2022
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PACS:
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73.61.Ey
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(III-V semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U2141241, 62004099, 61921005, and 91850112). |
Corresponding Authors:
Weizong Xu, Hai Lu
E-mail: wz.xu@nju.edu.cn;hailu@nju.edu.cn
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Cite this article:
Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海) Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage 2023 Chin. Phys. B 32 027302
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