Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

doi:10.1088/1674-1056/23/10/107803

Abstract Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn]_A=0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t₂ state of the neutral Mn³⁺ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.

Keywords: GaMnN photoluminescence magnetism metal-organic chemical vapor deposition

Received: 16 January 2014
Revised: 28 March 2014
Accepted manuscript online:

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204008, 11075176, and 60976090) and the National Key Basic Research Special Foundation of China (Grant No. 2013CB328705).

Corresponding Authors: Xu Zhang-Cheng
E-mail: zcxu@nankai.edu.cn

About author: 78.55.-m; 78.30.Fs

Cite this article:

Xing Hai-Ying (邢海英), Xu Zhang-Cheng (徐章程), Cui Ming-Qi (崔明启), Xie Yu-Xin (谢玉芯), Zhang Guo-Yi (张国义) Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition 2014 Chin. Phys. B 23 107803


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Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

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