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Chinese Physics, 2001, Vol. 10(8): 751-755    DOI: 10.1088/1009-1963/10/8/317
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

CURRENT-DEPENDENT POSITIVE MAGNETORESISTANCE IN Ga-DOPED La0.5Ca0.5MnO3

Chen Xin (陈新)ab, Wang Zhi-hong (王志宏)b, Li Run-wei (李润伟)b, Shen Bao-gen (沈保根)b, Zhao Hong-wu (赵宏武)b, Zhan Wen-shan (詹文山)b, Chen Jin-song (陈金松)a, Zhang Xi-xiang (张西祥)c
a Department of Physics, University of Science and Technology of China, Hefei 230026, China; b State Key Laboratory of Magnetism, Institute of Physics and Center of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; c Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
Abstract  The magnetic and transport properties of the Ga-doped charge-ordering state La0.5Ca0.5MnO3 have been studied. A current-dependent large positive magnetoresistance (1080%) at 5 K was observed. These observations are interpreted in terms of the spin-dependent tunnelling process between ferromagnetic clusters embedded in an antiferromagnetic matrix.
Keywords:  manganese oxide      magnetoresistance      spin-dependent tunnelling  
Received:  01 March 2001      Revised:  15 May 2001      Accepted manuscript online: 
PACS:  75.47.Lx (Magnetic oxides)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 19934003) and the State Key program of Research (Grant No. G1998061310).

Cite this article: 

Chen Xin (陈新), Wang Zhi-hong (王志宏), Li Run-wei (李润伟), Shen Bao-gen (沈保根), Zhao Hong-wu (赵宏武), Zhan Wen-shan (詹文山), Chen Jin-song (陈金松), Zhang Xi-xiang (张西祥) CURRENT-DEPENDENT POSITIVE MAGNETORESISTANCE IN Ga-DOPED La0.5Ca0.5MnO3 2001 Chinese Physics 10 751

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