Vertical GaN Shottky barrier diode with thermally stable TiN anode

doi:10.1088/1674-1056/abc547

Abstract Vertical GaN Schottky barrier diodes with TiN anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ cm², respectively. The current-voltage curves show rectifying characteristics under different temperatures from 25 ^°C to 200 ^°C, implying a good thermal stability of TiN/GaN contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at TiN/GaN interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.

Keywords: GaN Vertical Schottky barrier diode TiN interface quality

Received: 20 September 2020
Revised: 11 October 2020
Accepted manuscript online: 28 October 2020

PACS:	81.05.Ea	(III-V semiconductors)
	81.05.Je	(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
	52.59.Mv	(High-voltage diodes)
	84.30.Jc	(Power electronics; power supply circuits)

Fund: Project supported by the Open Project of State Key Laboratory of Superhard Materials, Jilin University (Grant No. 201906), Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics (Grant No. 202006), and the Science and Technology Program of Ningbo (Grant No. 2019B10129).

Corresponding Authors: ^†D. Liu and X. Li contributed equally to this work. ^‡Corresponding author. E-mail: fbc_ptf@126.com ^§Corresponding author. E-mail: wangqiliang@jlu.edu.cn

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Da-Ping Liu(刘大平), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Shao-Heng Cheng(成绍恒), and Qi-Liang Wang(王启亮) Vertical GaN Shottky barrier diode with thermally stable TiN anode 2021 Chin. Phys. B 30 038101

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Vertical GaN Shottky barrier diode with thermally stable TiN anode

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