Strain effects on optical polarisation properties in (1122) plane GaN films
Hao Guo-Dong(郝国栋)a)†, Chen Yong-Hai(陈涌海)b), Fan Ya-Ming(范亚明)a), Huang Xiao-Hui(黄晓辉)a), and Wang Huai-Bing(王怀兵)a)
a Nano-Devices and Materials Division, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; b Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (1122)-plane. The calculations are performed by the κ• p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction. The results show that the transition energies decrease with the biaxial strains changing from –0.5% to 0.5%. For films of (1122)-plane, the strains are expected to be anisotropic in the growth plane. Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property. The strain can also result in optical polarisation switching phenomena. Finally, we discuss the applications of these properties to the (1122) plane GaN-based light-emitting diode and lase diode.
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607), and the National Natural Science Foundation of China (Grant Nos. 60625402, 60990313 and 60990311).
Cite this article:
Hao Guo-Dong(郝国栋), Chen Yong-Hai(陈涌海), Fan Ya-Ming(范亚明), Huang Xiao-Hui(黄晓辉), and Wang Huai-Bing(王怀兵) Strain effects on optical polarisation properties in (1122) plane GaN films 2010 Chin. Phys. B 19 117104
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