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Chin. Phys. B, 2014, Vol. 23(2): 027101    DOI: 10.1088/1674-1056/23/2/027101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Lü Yuan-Jie (吕元杰)a, Feng Zhi-Hong (冯志红)a, Lin Zhao-Jun (林兆军)b, Gu Guo-Dong (顾国栋)a, Dun Shao-Bo (敦少博)a, Yin Jia-Yun (尹甲运)a, Han Ting-Ting (韩婷婷)a, Cai Shu-Jun (蔡树军)a
a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Abstract  Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance–voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode.
Keywords:  Al(Ga)N/GaN      Schottky barrier height      current-transport mechanism      leakage current  
Received:  20 March 2013      Revised:  28 April 2013      Accepted manuscript online: 
PACS:  71.55.Eq (III-V semiconductors)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  11.40.-q (Currents and their properties)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182).
Corresponding Authors:  Feng Zhi-Hong     E-mail:  blueledviet@yahoo.com.cn
About author:  71.55.Eq; 73.30.+y; 85.30.Mn; 11.40.-q

Cite this article: 

Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 2014 Chin. Phys. B 23 027101

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