Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

doi:10.1088/1674-1056/21/7/077103

Abstract AlGaN/GaN superlattice grown on the top of GaN buffer induces the broadening of the full width at half maximum of (102) and (002) x-ray diffraction rocking curves. With the increase of Si-doped concentration in GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. Significant increase of the full width at half maximum of the (002) rocking curves when the doping concentration reaches 2.5?10¹⁹ cm^-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.

Keywords: AlGaN/GaN superlattice Si doping

Received: 06 December 2011
Revised: 09 January 2012
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	68.65.Cd	(Superlattices)

Fund: Project supported by the National Key Science & Technology Special Project of China (Grant No. 2008ZX01002-002) and the Major Program and State Key Program of National Natural Science Foundation of China (Grant No. 60890191).

Corresponding Authors: Zhang Wei
E-mail: zwxidian@mail.xidian.edu.cn

Cite this article:

Zhang Wei(张伟), Xue Jun-Shuai(薛军帅), Zhou Xiao-Wei (周晓伟), Zhang Yue(张月), Liu Zi-Yang(刘子阳), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer 2012 Chin. Phys. B 21 077103

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Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

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