Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

doi:10.1088/1674-1056/24/6/067303

Abstract

InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal–organic–vapor phase epitaxy (MOVPE), which is challenge due to the lack of 、itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

Keywords: InGaN quantum dot light emitting diode MOVPE

Received: 20 January 2015
Revised: 06 February 2015
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	78.55.Cr	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)
	78.67.Hc	(Quantum dots)

Fund:

Project supported by the National Basic Research Program of China (Grant Nos. 2013CB632804, 2011CB301900, and 2012CB3155605), the National Natural Science Foundation of China (Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024, and 61176059), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

Corresponding Authors: Wang Lai
E-mail: wanglai@tsinghua.edu.cn

About author: 73.40.Kp; 78.55.Cr; 78.60.Fi; 78.67.Hc

Cite this article:

Wang Lai (汪莱), Yang Di (杨迪), Hao Zhi-Biao (郝智彪), Luo Yi (罗毅) Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes 2015 Chin. Phys. B 24 067303

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Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

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