Intersubband transitions in Al0.82In0.18N/GaN single quantum well

doi:10.1088/1674-1056/20/9/094207

Abstract The influence of the width of a lattice-matched Al_0.82In_0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al_0.82In_0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.

Keywords: Al_0.82In_0.18N/GaN single quantum well optoelectronic devices mid-infrared intersubband transition

Received: 06 September 2010
Revised: 19 April 2011
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	78.30.Fs	(III-V and II-VI semiconductors)
	42.70.Km	(Infrared transmitting materials)
	68.65.Fg	(Quantum wells)

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Wang Yu-Zhou(王宇宙), Li Ding(李丁), Li Lei(李磊),Liu Ning-Yang(刘宁炀), Liu Lei(刘磊),Cao Wen-Yu(曹文彧), Chen Wei-Hua(陈伟华), and Hu Xiao-Dong(胡晓东) Intersubband transitions in Al_0.82In_0.18N/GaN single quantum well 2011 Chin. Phys. B 20 094207

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Intersubband transitions in Al0.82In0.18N/GaN single quantum well

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Intersubband transitions in Al_0.82In_0.18N/GaN single quantum well