Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

doi:10.1088/1674-1056/21/6/067803

Abstract We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a “black hole”. Furthermore, strong yellow luminescence (YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.

Keywords: nonpolar semipolar GaN yellow luminescence

Received: 06 December 2011
Revised: 01 March 2012
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), and the National Natural Science Foundation of China (Grant Nos. 60736033, 60976068, and 61076097).

Corresponding Authors: Xu Sheng-Rui
E-mail: shengruixidian@126.com

Cite this article:

Zhou Xiao-Wei(周小伟), Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Dang Ji-Yuan(党纪源), LŰ Ling(吕玲), Hao Yue(郝跃), and Guo Li-Xin(郭立新) Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization 2012 Chin. Phys. B 21 067803

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Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

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