Effect of InxGa1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

doi:10.1088/1674-1056/22/10/106106

Abstract In this paper we report on the effect of an In_xGa_1-xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the In_xGa_1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.

Keywords: InGaN reciprocal space map indium incorporation surface morphology

Received: 04 January 2013
Revised: 20 March 2013
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	68.35.Dv	(Composition, segregation; defects and impurities)
	68.37.Ps	(Atomic force microscopy (AFM))
	78.60.Lc	(Optically stimulated luminescence)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science & Technology Innovation Program of the Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia-Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

Corresponding Authors: Chen Hong, He Miao
E-mail: hchen@aphy.iphy.ac.cn;herofate@126.com

Cite this article:

Qian Wei-Ning (钱卫宁), Su Shi-Chen (宿世臣), Chen Hong (陈弘), Ma Zi-Guang (马紫光), Zhu Ke-Bao (朱克宝), He Miao (何苗), Lu Ping-Yuan (卢平元), Wang Geng (王耿), Lu Tai-Ping (卢太平), Du Chun-Hua (杜春花), Wang Qiao (王巧), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟) Effect of In_xGa_1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition 2013 Chin. Phys. B 22 106106

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Effect of InxGa1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

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Effect of In_xGa_1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition