Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

doi:10.1088/1674-1056/25/11/117301

Abstract A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. The percentage errors E_ij within 3.83% show the great agreement between the simulated S-parameters and the measured data.

Keywords: GaN high-electron-mobility transistor switch small signal modeling parameter extraction error percentage

Received: 06 July 2016
Revised: 10 August 2016
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.40.Bh	(Computer-aided design of microcircuits; layout and modeling)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Corresponding Authors: Xiao-Hua Ma
E-mail: xhma@xidian.edu.cn

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Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华) Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method 2016 Chin. Phys. B 25 117301

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Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

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