The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

doi:10.1088/1674-1056/21/5/057110

Abstract We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron--hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron--hole pairs. The simulated magnetoresistance shows good consistency with the experimental results.

Keywords: organic magnetoresistance spin-orbit coupling recombination spin precession

Received: 03 September 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	71.70.Ej	(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
	73.43.Qt	(Magnetoresistance)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	72.80.Le	(Polymers; organic compounds (including organic semiconductors))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11005070), and the Research Planning Project of Ministry of Housing and Urban-Rural Development, China (Grant No. 2010-K4-15).

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Zhao Jun-Qing(赵俊卿), Ding Meng(丁猛), Zhang Tian-You(张天佑), Zhang Ning-Yu(张宁玉), Pang Yan-Tao(庞岩涛), Ji Yan-Ju(季燕菊), Chen Ying(陈莹), Wang Feng-Xiang(王凤翔), and Fu Gang(付刚) The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors 2012 Chin. Phys. B 21 057110

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The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

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