The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

doi:10.1088/1674-1056/21/7/078503

Abstract The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electronmobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by ⁶⁰Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.

Keywords: AlGaN/GaN enhancement-mode high-electron-mobility transistors ⁶⁰Co γ-ray irradiation

Received: 17 December 2011
Revised: 21 January 2012
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)

Fund: Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 50932002).

Corresponding Authors: Liu Xing-Zhao
E-mail: xzliu@uestc.edu.cn

Cite this article:

Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 ) The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors 2012 Chin. Phys. B 21 078503

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The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

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The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors