A unified drain current 1/f noise model for GaN-based high electron mobility transistors

doi:10.1088/1674-1056/23/2/020701

Abstract In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AlGaN/GaN high electron mobility transistor (HEMT). Based on both mobility fluctuation and carrier number fluctuation in a two-dimensional electron gas (2DEG) channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Δg_m/g_m reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Δg_m/g_m is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the AlGaN/GaN HEMTs.

Keywords: 1/f noise hot carrier piezoelectric effects AlGaN/GaN HEMT

Received: 14 January 2013
Revised: 13 May 2013
Accepted manuscript online:

PACS:	07.50.Hp	(Electrical noise and shielding equipment)
	85.40.Hp	(Lithography, masks and pattern transfer)
	71.55.Eq	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076101, 61204092, 61334002, and JJ0500102508).

Corresponding Authors: Zhuang Yi-Qi
E-mail: yqzhuang@xidian.edu.cn

About author: 07.50.Hp; 85.40.Hp; 71.55.Eq

Cite this article:

Liu Yu-An (刘宇安), Zhuang Yi-Qi (庄奕琪), Ma Xiao-Hua (马晓华), Du Ming (杜鸣), Bao Jun-Lin (包军林), Li Cong (李聪) A unified drain current 1/f noise model for GaN-based high electron mobility transistors 2014 Chin. Phys. B 23 020701

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A unified drain current 1/f noise model for GaN-based high electron mobility transistors

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