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Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography |
Wu Kui (吴奎)a b, Wei Tong-Bo (魏同波)a, Lan Ding (蓝鼎)c, Zheng Hai-Yang (郑海洋)a, Wang Jun-Xi (王军喜)a, Luo Yi (罗毅)b, Li Jin-Min (李晋闽)a |
a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China;
c National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.
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Received: 29 August 2013
Revised: 22 September 2013
Accepted manuscript online:
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PACS:
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85.60.Jb
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(Light-emitting devices)
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42.70.Qs
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(Photonic bandgap materials)
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81.16.Nd
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(Micro- and nanolithography)
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83.10.Rs
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(Computer simulation of molecular and particle dynamics)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB301902). |
Corresponding Authors:
Wei Tong-Bo
E-mail: tbwei@semi.ac.cn
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About author: 85.60.Jb; 42.70.Qs; 81.16.Nd; 83.10.Rs |
Cite this article:
Wu Kui (吴奎), Wei Tong-Bo (魏同波), Lan Ding (蓝鼎), Zheng Hai-Yang (郑海洋), Wang Jun-Xi (王军喜), Luo Yi (罗毅), Li Jin-Min (李晋闽) Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography 2014 Chin. Phys. B 23 028504
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