Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films
Zhao Kun (赵昆)ab, Huang Yan-Hong (黄延红)a, Lü Hui-Bin (吕惠宾)a, He Meng (何萌)a, Jin Kui-Juan (金奎娟)a, Chen Zheng-Hao (陈正豪)a, Zhou Yue-Liang (周岳亮)a, Cheng Bo-Lin (程波林)a, Dai Shou-Yu (戴守愚)a, Yang Guo-Zhen (杨国桢)a
a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
Abstract Ultrafast photoelectric characteristic has been observed in La0.67Ca0.33MnO3 films on tilted SrTiO3 substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ~300 ps and ~700 ps, respectively. The photovoltaic sensitivity was as large as ~500 mV/mJ.
Received: 26 October 2004
Accepted manuscript online:
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