Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

doi:10.1088/1674-1056/23/10/106106

Abstract Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer (IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells (MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.

Keywords: AlGaN/GaN multiple quantum wells epitaxial evolution

Received: 28 April 2014
Revised: 04 June 2014
Accepted manuscript online:

PACS:	61.66.Dk	(Alloys )
	61.72.-y	(Defects and impurities in crystals; microstructure)
	61.72.J-	(Point defects and defect clusters)
	61.72.jd	(Vacancies)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174008 and 61361166007), the National Basic Research Program of China (Grant Nos. 2012CB619306 and 2012CB619301), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100001120012).

Corresponding Authors: Xu Fu-Jun,Shen Bo
E-mail: fjxu@pku.edu.cn;bshen@pku.edu.cn

About author: 61.66.Dk; 61.72.-y; 61.72.J-; 61.72.jd

Cite this article:

Huang Cheng-Cheng (黄呈橙), Zhang Xia (张霞), Xu Fu-Jun (许福军), Xu Zheng-Yu (许正昱), Chen Guang (陈广), Yang Zhi-Jian (杨志坚), Tang Ning (唐宁), Wang Xin-Qiang (王新强), Shen Bo (沈波) Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template 2014 Chin. Phys. B 23 106106


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Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

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