Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure

doi:10.1088/1674-1056/ac0793

Abstract The threshold voltage (V_th) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ_1,p, polarization charge density σ_b, and equivalent unite capacitance C_oc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_th, and threshold voltage |V_th| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |V_th|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10¹⁶ cm^-3 at V_GS= -12 V and V_DS= -10 V.

Keywords: p-channel GaN MOSFETs enhancement mode (E-mode) threshold voltage

Received: 02 March 2021
Revised: 13 May 2021
Accepted manuscript online: 03 June 2021

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122).

Corresponding Authors: Sheng-Lei Zhao, Jin-Cheng Zhang
E-mail: slzhao@xidian.edu.cn;jchzhang@xidian.edu.cn

Cite this article:

Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure 2021 Chin. Phys. B 30 087305

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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure

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