Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/22/11/117306

Abstract We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi–Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage (change of the electron density).

Keywords: two-dimensional electron gas plasmon AlGaN/GaN high electron mobility transistor

Received: 18 March 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.21.Fg	(Quantum wells)
	73.63.Hs	(Quantum wells)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant Nos. Y0BAQ31001 and KJCX2-EW-705), and the National Natural Science Foundation of China (Grant Nos. 61271157, 61107093, and 10834004).

Corresponding Authors: Qin Hua
E-mail: hqin2007@sinano.ac.cn

Cite this article:

Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文) Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors 2013 Chin. Phys. B 22 117306

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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

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