Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
Ma Xiao-Hua(马晓华)a)b)†, Ma Ping(马平)a), Jiao Ying(焦颖)a), Yang Li-Yuan(杨丽媛)b), Ma Ji-Gang(马骥刚)a), He Qiang(贺强)a), Jiao Sha-Sha(焦莎莎)b), Zhang Jin-Cheng(张进成) b), and Hao Yue(郝跃)b)
aSchool of Technical Physics, Xidian University, Xi'an 710071, China; bKey Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure, which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface. While the carrier concentration reaches 1.32 × 1013 cm - 2 and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 104 cm2/(V·s) at 2 K. The Shubnikov—de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEG is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.
(Magnetotransport phenomena; materials for magnetotransport)
Cite this article:
Ma Xiao-Hua(马晓华), Ma Ping(马平), Jiao Ying(焦颖), Yang Li-Yuan(杨丽媛), Ma Ji-Gang(马骥刚), He Qiang(贺强), Jiao Sha-Sha(焦莎莎), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures 2011 Chin. Phys. B 20 097302
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