Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

doi:10.1088/1674-1056/20/9/097302

Abstract Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure, which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface. While the carrier concentration reaches 1.32 × 10¹³ cm^{- 2} and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 10⁴ cm²/(V·s) at 2 K. The Shubnikov—de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEG is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.

Keywords: AlGaN/AlN/GaN/SiC heterostructures two-dimensional electron gas Shubnikov—de Haas oscillations magnetotransport properties

Received: 29 March 2011
Revised: 05 May 2011
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)

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Ma Xiao-Hua(马晓华), Ma Ping(马平), Jiao Ying(焦颖), Yang Li-Yuan(杨丽媛), Ma Ji-Gang(马骥刚), He Qiang(贺强), Jiao Sha-Sha(焦莎莎), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures 2011 Chin. Phys. B 20 097302

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Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

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