Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

doi:10.1088/1674-1056/24/7/077801

Abstract A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes (LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells (QWs) approaching the p-GaN side, the uniformity of distribution of carriers and radiative recombination rate for the non-polar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.

Keywords: semi/non-polar InGaN/GaN LEDs APSYS Si substrate

Received: 07 November 2014
Revised: 02 February 2015
Accepted manuscript online:

PACS:	78.20.Bh	(Theory, models, and numerical simulation)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.60.Jb	(Light-emitting devices)
	87.16.ad	(Analytical theories)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018), and the Program for Changjiang Scholars and Innovative Research Team in Universities of China (Grant No. IRT13064).

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

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Yu Lei (于磊), Zhang Yuan-Wen (张苑文), Li Kai (李凯), Pi Hui (皮辉), Diao Jia-Sheng (刁家声), Wang Xing-Fu (王幸福), Hu Wen-Xiao (胡文晓), Zhang Chong-Zhen (张崇臻), Song Wei-Dong (宋伟东), Shen Yue (沈岳), Li Shu-Ti (李述体) Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates 2015 Chin. Phys. B 24 077801

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Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

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