a Research Institute of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China; b School of Telecommunications Engineering, Xidian University, Xi'an 710071, China
Abstract Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10$^{17}$cm$^{-3}$ to 10$^{19}$cm$^{-3}$.The results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH$_{4}$ is larger than 6.38$\mu$mol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened, which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.
Received: 24 March 2005
Revised: 30 May 2005
Accepted manuscript online:
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
Fund: Project supported by the State Key Development Program for Basic Research of China(973) and the National Advanced Research Program (Grant No 41308060106).
Cite this article:
Feng Qian (冯倩), Gong Xin (龚欣), Zhang Xiao-Ju (张晓菊), Hao Yue (郝跃) Photoluminescence characteristics of GaN:Si 2005 Chinese Physics 14 2133
Non-volatile multi-state magnetic domain transformation in a Hall balance Yang Gao(高阳), Jingyan Zhang(张静言), Pengwei Dou(窦鹏伟), Zhuolin Li(李卓霖), Zhaozhao Zhu(朱照照), Yaqin Guo(郭雅琴), Chaoqun Hu(胡超群), Weidu Qin(覃维都), Congli He(何聪丽), Shipeng Shen(申世鹏), Ying Zhang(张颖), and Shouguo Wang(王守国). Chin. Phys. B, 2022, 31(6): 067502.
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