Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing
Junjun Xue(薛俊俊)1,3, Qing Cai(蔡青)2, Baohua Zhang(张保花)2, Mei Ge(葛梅)2, Dunjun Chen(陈敦军)2, Ting Zhi(智婷)1, Jiangwei Chen(陈将伟)1, Lianhui Wang(汪联辉)3, Rong Zhang(张荣)2, Youdou Zheng(郑有炓)2
1. School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
3. Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
InGaN layers capped with GaN were annealed at 550℃ for 1 hour. During annealing, cracks appeared and dissolved InGaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to be cubic GaN on the tops of precipitates, formed by nitriding the pre-existing Ga droplets under nitrogen ions irradiation.
Project supported by the National Natural Science Foundation of China (Grant Nos. 61604080, 61574079, 61634002, and 61474060), Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160883), University Science Research Project of Jiangsu Province, China (Grant Nos. 16KJB140011 and 14KJB510020), and NUPTSF, China (Grant No. NY214154).
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