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Chinese Physics, 2007, Vol. 16(7): 2120-2122    DOI: 10.1088/1009-1963/16/7/054
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Photoresponse of the In0.3Ga0.7 N metal--insulator--semiconductor photodetectors

Zhou Jian-Jun(周建军), Wen Bo(文博), Jiang Ruo-Lian(江若琏), Liu Cheng-Xiang(刘成祥), Ji Xiao-Li(姬小利), Xie Zi-Li(谢自力), Chen Dun-Jun(陈敦军), Han Ping(韩平), Zhang Rong(张荣), and Zheng You-Dou(郑有炓)
Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics,Nanjing University, Nanjing 210093, China
Abstract  In0.3Ga0.7N metal--insulator--semiconductor (MIS) and metal--semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The photoresponse and reverse current--voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.
Keywords:  InGaN      photodetector      metal--insulator--semiconductor structure  
Received:  18 October 2006      Revised:  24 November 2006      Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Hi (Surface barrier, boundary, and point contact devices)  
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No~2006CB6049), the National Natural Science Foundation of China (Grant No~60476030), and the Natural Science Foundation of Jiangsu Province of China (Grant No~BK2

Cite this article: 

Zhou Jian-Jun(周建军), Wen Bo(文博), Jiang Ruo-Lian(江若琏), Liu Cheng-Xiang(刘成祥), Ji Xiao-Li(姬小利), Xie Zi-Li(谢自力), Chen Dun-Jun(陈敦军), Han Ping(韩平), Zhang Rong(张荣), and Zheng You-Dou(郑有炓) Photoresponse of the In0.3Ga0.7 N metal--insulator--semiconductor photodetectors 2007 Chinese Physics 16 2120

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