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Chin. Phys. B, 2009, Vol. 18(4): 1627-1630    DOI: 10.1088/1674-1056/18/4/057
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Numerical model of multilayer organic light-emitting devices

Hu Yue(胡玥) and Rao Hai-Bo(饶海波)
School of Optoelectronic Information, University of Electronic Scienceand Technology of China (UESTC), Chengdu 610054, China
Abstract  A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I--V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.
Keywords:  organic light-emitting devices      multilayer      simulation  
Received:  01 September 2008      Revised:  28 November 2008      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by Zhejiang Yangguang Cooperation Foundation, China (Grant No W050317).

Cite this article: 

Hu Yue(胡玥) and Rao Hai-Bo(饶海波) Numerical model of multilayer organic light-emitting devices 2009 Chin. Phys. B 18 1627

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