Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

doi:10.1088/1674-1056/19/4/047205

Abstract This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim$$5.65\times 10^{ - 5}$ $\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500 $^\circ$C. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21 V at an injection current of 20 mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20 mA in comparison with that of LEDs with conventional Ni/Au contacts.

Keywords: p--GaN tantalum-doped indium tin oxide (Ta-doped ITO) Ohmic contact specific contact resistance

Received: 25 July 2009
Revised: 29 August 2009
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	73.40.Cg	(Contact resistance, contact potential)
	61.72.uj	(III-V and II-VI semiconductors)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by Science and Technology Planning Project of Guangdong Province (Grant No.~2007A010501008), the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No.~2009B090300338).

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Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇) Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes 2010 Chin. Phys. B 19 047205

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Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

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