Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer
Yu Xiao-Peng (喻晓鹏)a b, Fan Guang-Han (范广涵)a b, Ding Bin-Bin (丁彬彬)a b, Xiong Jian-Yong (熊建勇)a b, Xiao Yao (肖瑶)a b, Zhang Tao (张涛)a b, Zheng Shu-Wen (郑树文)a b
a Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China; b Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China
Abstract The characteristics of a blue light-emitting diode (LED) with a p-InAlGaN hole injection layer (HIL) is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InAlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176043) and the Special Funds for Strategic and Emerging Industries Projects of Guangdong Province, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).
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