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Abstract A manganite p-n heterojunction composed of La0.67Sr0.33MnO3 film and 0.05wt % Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in the temperature range 150–380 K, and the linear relation between bias and activation energies deduced from the R-1/T curves is observed. According to the activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.
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Received: 26 July 2013
Revised: 17 October 2013
Accepted manuscript online:
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Cite this article:
Directly measure the interfacial barrier height of the manganite p-n heterojunction Chin. Phys. B 0
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