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Chin. Phys. B, 2010, Vol. 19(11): 117801    DOI: 10.1088/1674-1056/19/11/117801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

Hu Xiao-Long(胡晓龙)a), Zhang Jiang-Yong(张江勇) a)b), Shang Jing-Zhi(尚景智)c), Liu Wen-Jie(刘文杰)a), and Zhang Bao-Ping(张保平) a)d)†
a Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; b State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore; d Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005, China
Abstract  This paper studies the exciton–longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang–Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang–Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton–LO–phonon coupling is strongly affected by the thickness of the cap layer.
Keywords:  exciton–longitudinal-optical-phonon      InGaN/GaN single quantum well      GaN cap layer      Huang–Rhys factor  
Received:  28 February 2010      Revised:  13 May 2010      Accepted manuscript online: 
PACS:  63.20.kk (Phonon interactions with other quasiparticles)  
  63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials)  
  78.55.Cr (III-V semiconductors)  
  78.67.De (Quantum wells)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876007 and 10974165) and the Research Program of Xiamen Municipal Science and Technology Bureau, China (Grant No. 2006AA03Z110).

Cite this article: 

Hu Xiao-Long(胡晓龙), Zhang Jiang-Yong(张江勇), Shang Jing-Zhi(尚景智), Liu Wen-Jie(刘文杰), and Zhang Bao-Ping(张保平) The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 2010 Chin. Phys. B 19 117801

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