Abstract A vertical GaN field-effect transistor with an integrated self-adapted channel diode (CD-FET) is proposed to improve the reverse conduction performance. It features a channel diode (CD) formed between a trench source on the insulator and a P-type barrier layer (PBL), together with a P-shield layer under the trench gate. At forward conduction, the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source, without influencing the on-state characteristic of the CD-FET. At reverse conduction, the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage (), preventing the inherent body diode from turning on. Meanwhile, the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage (). Moreover, the P-shield not only shields the gate from a high electric field but also transforms part of to so as to significantly reduce the gate charge (), leading to a low switching loss (). Consequently, the proposed CD-FET achieves a low of 1.65 V and a high of 1446 V, and , and of the CD-FET are decreased by 49%, 55% and 80%, respectively, compared with those of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET).
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).
Corresponding Authors:
Xiaorong Luo
E-mail: xrluo@uestc.edu.cn
Cite this article:
Siyu Deng(邓思宇), Dezun Liao(廖德尊), Jie Wei(魏杰), Cheng Zhang(张成),Tao Sun(孙涛), and Xiaorong Luo(罗小蓉) High-performance vertical GaN field-effect transistor with an integrated self-adapted channel diode for reverse conduction 2023 Chin. Phys. B 32 078503
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