INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition |
Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
|
|
Abstract Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.
|
Received: 16 June 2015
Revised: 22 August 2015
Accepted manuscript online:
|
PACS:
|
81.05.Ea
|
(III-V semiconductors)
|
|
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017). |
Corresponding Authors:
Jin-Cheng Zhang
E-mail: jchzhang@xidian.edu.cn
|
Cite this article:
Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition 2016 Chin. Phys. B 25 018102
|
[1] |
Khan M A, Bhattarai A, Kuznia J N and Olson D T 1993 Appl. Phys. Lett. 63 1214
|
[2] |
Mi M H, Zhang K, Zhao S L, Wang C, Zhang J C, Ma X H and Hao Y 2015 Chin. Phys. B 24 027303
|
[3] |
Cao M Y, Lu Y, Wei J X, Chen Y H, Li W J, Zheng J X, Ma X H and Hao Y 2014 Chin. Phys. B 23 087201
|
[4] |
Chung J W, Hoke W E, Chumbes E M and Palacios T 2010 IEEE Electron Device Lett. 31 195
|
[5] |
Simin G, Hu X, Tarakji A, Zhang J, Koudymov A, Saygi S, Yang J, Khan A, Shur M S and Gaska R 2001 Jpn. J. Appl. Phys. 40 L1142
|
[6] |
Chu R M, Zheng Y D, Zhou Y G, Gu S L, Shen B, Zhang R, Jiang R L, Han P and Shi Y 2003 Appl. Phys. A 77 669
|
[7] |
Okamoto N, Hoshino K, Hara N, Takikawa M and Arakawa Y 2004 J. Cryst. Growth 272 278
|
[8] |
Ager lll J W, Miller N, Jones R E, Yu K M, Wu J, Schaff W J and Walukiewicz W 2008 Phys. Status Solidi B 245 873
|
[9] |
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G and Khan M A 2003 Solid-State Electron 47 1099
|
[10] |
Lanford W, Kumar V, Schwindt R, Kuliev A, Adesida I, Dabiran A M, Wowchak A M, Chow P P and Lee J W 2004 Electron. Lett. 40 771
|
[11] |
Zhou X Y, Feng Z H, Wang Y G, Gu G D, Song X B and Cai S J 2015 Chin. Phys. B 24 048503
|
[12] |
Morkoc H 2008 Handbook of Nitride Semiconductors and Devices, Vol. 3, GaN-based Optical and Electronic Devices (New York: Wiley) p. 375
|
[13] |
Maeda N, Saitoh T, Tsubaki K, Nishida T and Kobayashi N 1999 Jpn. J. Appl. Phys. 38 L799
|
[14] |
Neuburger M, Daumiller I, Zimmermann T, Kunze M, Koley G, Spencer M G, Dadgar A, Krtschil A, Krost A and Kohn E 2003 Electron. Lett. 39 1614
|
[15] |
Hsin Y, Hsu H, Chuo C and Chyi J 2001 IEEE Electron Device Lett. 22 501
|
[16] |
Simin G, Koudymov A, Fatima H, Zhang J, Yang J, Khan M A, Hu X, Tarakji A, Gaska R and Shur M S 2002 IEEE Electron Device Lett. 23 458
|
[17] |
Adivarahan V, Gaevski M, Koudymov A, Yang J, Simin G and Khan M A 2007 IEEE Electron Device Lett. 28 192
|
[18] |
Sugita K, Tanaka M, Sasamoto K, Bhuiyan A G, Hashimoto A and Yamamoto A 2011 J. Cryst. Growth 318 505
|
[19] |
Wang Q, Ji Z W, Wang F, Mu Q, Zheng Y J, Xu X G, Lü Y J and Feng Z H 2015 Chin. Phys. B 24 024219
|
[20] |
Johnson M C, Konsek S L, Zettl A and Bourret-Courchesne E D 2004 J. Cryst. Growth 272 400
|
[21] |
Ruterana P, Aguinet R and Poisson M A 1999 Phys. Status Solidi B 216 663
|
[22] |
Ikki H, Isobe Y, Iida D, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I, Amano H, Bandoh A and Udagawa T 2011 Phys. Status Solidi A 208 1614
|
[23] |
Gökden S, Tülek R, Teke A, Leach J H, Fan Q, Xie J, Özgür Ü, Morkoç H, Lisesivdin S B and Özbay E 2010 Semicond. Sci. Technol. 25 045024
|
[24] |
Beh K P, Yam F K, Chin C W, Tneh S S and Hassan Z 2010 J. Alloys Compd. 506 343
|
[25] |
Wang C X, Tsubaki K, Kobayashi N, Makimoto T and Maeda N 2004 Appl. Phys. Lett. 84 2313
|
[26] |
Xie J, Leach J H, Ni X, Wu M, Shimada R, Özgür Ü and Morkoç H 2007 Appl. Phys. Lett. 91 262102
|
[27] |
Laboutin O, Cao Y, Johnson W, Wang R and Li G 2012 Appl. Phys. Lett. 100 121909
|
[28] |
Romano L T, Krusor B S, McCluskey M D, Bour D P and Nauka K 1998 Appl. Phys. Lett. 73 1757
|
[29] |
Yu T H and Brennan K F 2001 J. Appl. Phys. 89 3827
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|