Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(2): 027302    DOI: 10.1088/1674-1056/23/2/027302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

Ma Xiao-Hua (马晓华)a b, Lü Min (吕敏)a b, Pang Lei (庞磊)c, Jiang Yuan-Qi (姜元祺)a b, Yang Jing-Zhi (杨靖治)a b, Chen Wei-Wei (陈伟伟)a b, Liu Xin-Yu (刘新宇)c
a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  The kink effect in current–voltage (IV) characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current (DC) IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage (Vds) and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.
Keywords:  kink effect      deep levels      hot electrons      GaN-based HEMT  
Received:  05 May 2013      Revised:  28 May 2013      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  79.20.Ap (Theory of impact phenomena; numerical simulation)  
Fund: Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915).
Corresponding Authors:  Ma Xiao-Hua     E-mail:  xhma@xidian.edu.cn
About author:  73.61.Ey; 72.20.Jv; 79.20.Ap

Cite this article: 

Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier 2014 Chin. Phys. B 23 027302

[1] Ando Y, Okamoto Y, Miyamoto H, Nakayama T, Inoue T and Kuzauhara M 2003 IEEE Trans. Electron Dev. 24 289
[2] Sheppard S T, Doverspike K, Pribble W L, Allen S T, Palmour J W, Kehias L T and Jenkins T J 1999 IEEE Electron Dev. Lett. 20 161
[3] Moon J S, Micovic M, Janke P, Hashimoto P, Wong W S, Widman R D, McCray L, Kurdoghlian A and Nguyen C 2001 Electron. Lett. 37 528
[4] Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh P 2004 IEEE Electron Dev. Lett. 25 117
[5] Vetury R, Zhang N Q, Keller S and Mishra U K 2001 IEEE Trans. Electron Dev. 48 560
[6] Binary S C, Ikossi K, Roussos J A, Kruppa W, Park D, Dietrich H B, Koleske D D, Wickenden A E and Henry R L 2001 IEEE Trans. Electron Dev. 48 465
[7] Kato K, Wada T and Taniguchi K 1985 IEEE Trans. Electron Dev. 32 458
[8] Zeghbroeck B J, Patrick W, Meier H and Vettiger P 1987 IEEE Electron Dev. Lett. 8 188
[9] Fujishiro H I, Inokuchi K, Nishi S and Sano Y 1989 Jpn. J. Appl. Phys. 28 1734
[10] Haruyama J, Negishi H, Nishimura Y and Nashimoto Y 1997 IEEE Trans. Electron Dev. 44 25
[11] Somerville M H and Del Alamo J A 1996 IEEE Electron Dev. Lett. 17 473
[12] Somerville M H, Ernst A and Del Alamo J A 2000 IEEE Trans. Electron Dev. 47 922
[13] Suemitsu T, Yokoyama H, Ishii T, Enoki T, Meneghesso G and Zanoni E 2002 IEEE Trans. Electron Dev. 49 1694
[14] Kunihiro K, Yano H, Goto N and Ohno Y 1993 IEEE Trans. Electron Dev. 40 493
[15] Canali C, Paccagnella A, Magistrali F, Sangalli M, Tedesco C and Zanoni E 1991 IEE Proc.: Circ. Dev. Sys. 138 104
[16] Mazzanti A, Verzellesi G, Canali C, Meneghesso G and Zanoni E 2002 IEEE Electron Dev. Lett. 23 383
[17] Binari S C, Ikossi K, Roussos J A, Kruppa W, Doewon Park, Dietrich H B, Koleske D D, Wichenden A E and Henry R L 2001 IEEE Trans. Electron Dev. 48 465
[18] Meneghesso G, Rossi F, Salviati G and Uren M J 2010 Appl. Phys. Lett. 96 263512
[19] Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs M M P D, Caddemi A and Vannini G 2011 Solid-State Electron. 64 28
[20] Ma X H, Ma J G, Yang L Y, He Q, Jiao Y, Ma P and Hao Y 2011 Chin. Phys. B 20 067304
[21] Brunel L, Malbert N, Curutchet A and Labat N 2012 42nd European Solid-State Dev. Research Conference (ESSDERC), 17–21 September, 2012, Bordeaux, France, p. 270
[22] Pu Y, Pang L, Chen X J, Yuan T T, Luo W J and Liu X Y 2011 Chin. Phys. B 20 097305
[23] Binari S C, Klein P B and Kazior T E 2002 Proc. IEEE 90 1048
[24] Wang X H, Pang L, Wang J H, Yuan T T, Luo W J, Chen X J and Liu X Y 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, 19–20 April, 2012, Chengdu, China, p. 4
[25] Suemitsu T, Enoki T, Sano N, Tomizawa M and Ishii Y 1998 IEEE Trans. Electron Dev. 45 2390
[1] Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation
Jin-Jin Tang(汤金金), Gui-Peng Liu(刘贵鹏), Jia-Yu Song(宋家毓), Gui-Juan Zhao(赵桂娟), and Jian-Hong Yang(杨建红). Chin. Phys. B, 2021, 30(2): 027303.
[2] Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(2): 027303.
[3] An improved EEHEMT model for kink effect on AlGaN/GaN HEMT
Cao Meng-Yi (曹梦逸), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Chen Yong-He (陈永和), Li Wei-Jun (李卫军), Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(8): 087201.
[4] Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(7): 077304.
[5] Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions
Shi Li-Yang (时俪洋), Shen Bo (沈波), Yan Jian-Chang (闫建昌), Wang Jun-Xi (王军喜), Wang Ping (王平). Chin. Phys. B, 2014, 23(11): 116102.
[6] Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2013, 22(9): 097303.
[7] Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃). Chin. Phys. B, 2011, 20(6): 067304.
[8] TERAHERTZ SPECTRA EMITTED FROM HOT CARRIERS IN TWO-DIMENSIONAL SEMICONDUCTORS
Lei Xiao-lin (雷啸霖), Liu Shi-yong (刘世勇). Chin. Phys. B, 2001, 10(9): 840-843.
[9] A RELATIVISTIC QUASI-STATIC MODEL FOR ELECTRONS IN INTENSE LASER FIELDS
Chen Bao-zhen (陈宝振). Chin. Phys. B, 2001, 10(1): 44-45.
No Suggested Reading articles found!