Effect of film thickness on interfacial barrier of manganite-based heterojunctions

doi:10.1088/1674-1056/19/11/117306

Abstract Interfacial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interfacial barrier for La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ junctions. The barrier is extracted from the forward current--voltage characteristics. Our results demonstrate that the barrier decreases gradually from ～0.85 eV to ～0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.

Keywords: manganite heterojunction thickness

Received: 15 June 2010
Revised: 20 July 2010
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Pz	(Photoconduction and photovoltaic effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10804094, 50832007, 50721001 and 50821001), and the Natural Science Foundation of Hebei Province, China (Grant No. A2009000339).

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Xie Yan-Wu (谢燕武), Guo De-Feng (郭得峰), Sun Ji-Rong(孙继荣), and Shen Bao-Gen(沈保根) Effect of film thickness on interfacial barrier of manganite-based heterojunctions 2010 Chin. Phys. B 19 117306

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Effect of film thickness on interfacial barrier of manganite-based heterojunctions

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