Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

doi:10.1088/1674-1056/21/12/126102

Abstract Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using co-deposition process with using sodium and Al₂O₃ as the precursors. X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5～9.5)×10¹⁰ cm^-2·eV^-1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2. Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT with using SBA as gate dielectric shifts positively from -5.5 V to -3.5 V. From XPS results, the surface valence-band maximum (VBM-E_F) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-E_F), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG).

Keywords: SBA AlGaN/GaN MESHEMT MISHEMT

Received: 20 April 2012
Revised: 04 June 2012
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	77.55.D-

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50932002).

Corresponding Authors: Liu Xing-Zhao
E-mail: xzliu@uestc.edu.cn

Cite this article:

Tian Ben-Lang (田本朗), Chen Chao (陈超), Li Yan-Rong (李言荣), Zhang Wan-Li (张万里), Liu Xing-Zhao (刘兴钊) Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors 2012 Chin. Phys. B 21 126102

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Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

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