1 Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
2 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Department of Physics, Beijing Normal University, Beijing 100875, China
Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.
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