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Chin. Phys. B, 2017, Vol. 26(7): 077302    DOI: 10.1088/1674-1056/26/7/077302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions

Hai-Lin Huang(黄海林)1,2, Deng-Jing Wang(王登京)1, Hong-Rui Zhang(张洪瑞)2, Hui Zhang(张慧)2, Chang-Min Xiong(熊昌民)3, Ji-Rong Sun(孙继荣)2, Bao-Gen Shen(沈保根)2
1 Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
2 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Department of Physics, Beijing Normal University, Beijing 100875, China
Abstract  

Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

Keywords:  manganite      heterojunction      photocurrent  
Received:  22 March 2017      Revised:  08 April 2017      Accepted manuscript online: 
PACS:  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  75.47.Lx (Magnetic oxides)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos.11520101002 and 11474024).

Corresponding Authors:  Deng-Jing Wang     E-mail:  wangdengjing@wust.edu.cn

Cite this article: 

Hai-Lin Huang(黄海林), Deng-Jing Wang(王登京), Hong-Rui Zhang(张洪瑞), Hui Zhang(张慧), Chang-Min Xiong(熊昌民), Ji-Rong Sun(孙继荣), Bao-Gen Shen(沈保根) Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions 2017 Chin. Phys. B 26 077302

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