Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

doi:10.1088/1674-1056/24/11/117103

Abstract A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.

Keywords: AlGaN/GaN heterostructure field effect transistors (HFETs) switching characteristics substrate bias

Received: 27 February 2015
Revised: 15 June 2015
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	85.30.Tv	(Field effect devices)
	77.80.Fm	(Switching phenomena)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Corresponding Authors: Lin Zhao-Jun
E-mail: linzj@sdu.edu.cn

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Yang Ming (杨铭), Lin Zhao-Jun (林兆军), Zhao Jing-Tao (赵景涛), Wang Yu-Tang (王玉堂), Li Zhi-Yuan (李志远), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors 2015 Chin. Phys. B 24 117103

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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

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