Abstract Ultrahigh density data storage devices made by scanning probe techniques based on various recording media and their corresponding recording mechanisms, have attracted much attention recently, since they ensure a high data density in a non-volatile, erasable form in some kinds of ways. It is of particular interest to employ organic polymers with novel functional properties within a single molecule (or a single molecular complex) for fabricating electronic devices on a single molecular scale. Here, it is reported that a new process for ultrahigh density and erasable data storage, namely, molecular bistability on an organic charge transfer complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA) switched by a scanning tunneling microscope (STM). Data density exceeds 1013 bits/cm2 with a writing time per bit of ～1μs. Current-voltage (I/V) measurements before and after the voltage pulse from the STM tip, together with optical absorption spectroscopy and macroscopic four-probe I/V measurements demonstrate that the writing mechanism is conductance transition in the organic complex. This mechanism offers an attractive combination of ultrahigh data density coupled with high speed. The ultimate bit density achievable appears to be limited only by the size of the organic complex, which is less than 1nm in our case, corresponding to 1014 bits/cm2. We believe that provided the lifetime can be improved, molecular bistability may represent a practical route for ultrahigh density data storage devices.
Received: 04 June 2001
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 69890223).
Cite this article:
Gao Hong-jun (高鸿钧), Shi Dong-xia (时东霞), Zhang Hao-xu (张昊旭), Lin Xiao (林晓) ULTRAHIGH DATA DENSITY STORAGE WITH SCANNING TUNNELING MICROSCOPY 2001 Chinese Physics 10 179
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