Other articles related with "MOS":
37101 Qian Liang(梁前), Xiangyan Luo(罗祥燕), Guolin Qian(钱国林), Yuanfan Wang(王远帆), Yongchao Liang(梁永超), and Quan Xie(谢泉)
  Effects of vacancy and external electric field on the electronic properties of the MoSi2N4/graphene heterostructure
    Chin. Phys. B   2024 Vol.33 (3): 37101-037101 [Abstract] (67) [HTML 1 KB] [PDF 4108 KB] (69)
34205 Yixiang Peng(彭怡翔), Bing Chen(陈兵), Le Wang(王乐), and Shengmei Zhao(赵生妹)
  Diffraction deep neural network-based classification for vector vortex beams
    Chin. Phys. B   2024 Vol.33 (3): 34205-034205 [Abstract] (75) [HTML 1 KB] [PDF 1189 KB] (119)
15204 Shi-Dong Peng(彭世东), Jing Li(李静), Wei Duan(段薇), Yun-Dong Cao(曹云东), Shu-Xin Liu(刘树鑫), and Hao Huang(黄浩)
  Fluid-chemical modeling of the near-cathode sheath formation process in a high current broken in DC air circuit breaker
    Chin. Phys. B   2024 Vol.33 (1): 15204-15204 [Abstract] (81) [HTML 0 KB] [PDF 2971 KB] (27)
109901 Renwu Zhou(周仁武), Xianhui Zhang(张先徽), Zichao Zong(宗子超), Junxiong Li(李俊雄), Zhoubin Yang(杨周斌), Dongping Liu(刘东平), and Size Yang(杨思泽)
  Corrigendum to “Reactive oxygen species in plasma against E. coli cells survival rate”
    Chin. Phys. B   2023 Vol.32 (10): 109901-109901 [Abstract] (97) [HTML 1 KB] [PDF 1495 KB] (15)
118502 Jin-Ping Zhang(张金平), Wei Chen(陈伟), Zi-Xun Chen(陈子珣), and Bo Zhang(张波)
  SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability
    Chin. Phys. B   2023 Vol.32 (11): 118502-118502 [Abstract] (135) [HTML 0 KB] [PDF 947 KB] (62)
117301 Tao Xiang(相韬), Fengxiang Chen(陈凤翔), Xiaoli Li(李晓莉),Xiaodong Wang(王小东), Yuling Yan(闫誉玲), and Lisheng Wang(汪礼胜)
  Simulation of optical and electrical synaptic functions in MoS2/α-In2Se3 heterojunction memtransistors
    Chin. Phys. B   2023 Vol.32 (11): 117301-117301 [Abstract] (132) [HTML 0 KB] [PDF 1326 KB] (44)
115201 Xiong Chen(陈雄), Xing-Quan Wang(王兴权), Bin-Xiang Zhang(张彬祥), Ming Yuan(袁明), and Si-Ze Yang(杨思泽)
  Compared discharge characteristics and film modifications of atmospheric pressure plasma jets with two different electrode geometries
    Chin. Phys. B   2023 Vol.32 (11): 115201-115201 [Abstract] (120) [HTML 0 KB] [PDF 1488 KB] (62)
108503 Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Zhi-Feng Lei(雷志锋), Chao Peng(彭超), Wu-Ying Ma(马武英), Di Wang(王迪), Chang-Hao Sun(孙常皓), Feng-Qi Zhang(张凤祁), Zhan-Gang Zhang(张战刚), Ye Yang(杨业), Wei Lv(吕伟), Zhong-Ming Wang(王忠明), Xiang-Li Zhong(钟向丽), and Xiao-Ping Ouyang(欧阳晓平)
  Proton induced radiation effect of SiC MOSFET under different bias
    Chin. Phys. B   2023 Vol.32 (10): 108503-108503 [Abstract] (113) [HTML 0 KB] [PDF 1463 KB] (31)
105201 Wei-Min Hu(胡蔚敏), Kai-Xin Yin(尹凯欣), Xiao-Jun Wang(王小军), Jing Yang(杨晶), Ke Liu(刘可), Qin-Jun Peng(彭钦军), and Zu-Yan Xu(许祖彦)
  Transmission effects of high energy nanosecond lasers in laser-induced air plasma under different pressures
    Chin. Phys. B   2023 Vol.32 (10): 105201-105201 [Abstract] (126) [HTML 0 KB] [PDF 815 KB] (96)
104208 Sheng-Jie Ma(马圣杰), Shi-Long Xu(徐世龙), Xiao Dong(董骁), Xin-Yuan Zhang(张鑫源), You-Long Chen(陈友龙), and Yi-Hua Hu(胡以华)
  Theoretical analysis of the optical rotational Doppler effect under atmospheric turbulence by mode decomposition
    Chin. Phys. B   2023 Vol.32 (10): 104208-104208 [Abstract] (131) [HTML 0 KB] [PDF 1554 KB] (52)
97204 Sheng-Lian Jiang(蒋盛莲), Yanxia Liu(刘彦霞), and Li-Jun Lang(郎利君)
  General mapping of one-dimensional non-Hermitian mosaic models to non-mosaic counterparts: Mobility edges and Lyapunov exponents
    Chin. Phys. B   2023 Vol.32 (9): 97204-097204 [Abstract] (283) [HTML 1 KB] [PDF 2083 KB] (388)
98501 Yi-Fan Li(李逸帆), Tao Ni(倪涛), Xiao-Jing Li(李晓静), Juan-Juan Wang(王娟娟), Lin-Chun Gao(高林春), Jian-Hui Bu(卜建辉), Duo-Li Li(李多力), Xiao-Wu Cai(蔡小五), Li-Da Xu(许立达), Xue-Qin Li(李雪勤), Run-Jian Wang(王润坚), Chuan-Bin Zeng(曾传滨), Bo Li(李博), Fa-Zhan Zhao(赵发展), Jia-Jun Luo(罗家俊), and Zheng-Sheng Han(韩郑生)
  Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process
    Chin. Phys. B   2023 Vol.32 (9): 98501-098501 [Abstract] (144) [HTML 0 KB] [PDF 2406 KB] (24)
87801 Chun-Yan Zhao(赵春艳), Sha-Sha Li(李莎莎), and Yong Yan(闫勇)
  Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures
    Chin. Phys. B   2023 Vol.32 (8): 87801-087801 [Abstract] (175) [HTML 1 KB] [PDF 1802 KB] (86)
68502 Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄)
  Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs
    Chin. Phys. B   2023 Vol.32 (6): 68502-068502 [Abstract] (210) [HTML 0 KB] [PDF 1436 KB] (95)
67303 Weizhong Chen(陈伟中), Liuting Mou(牟柳亭), Haifeng Qin(秦海峰), Hongsheng Zhang(张红升), and Zhengsheng Han(韩郑生)
  An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics
    Chin. Phys. B   2023 Vol.32 (6): 67303-067303 [Abstract] (246) [HTML 0 KB] [PDF 1840 KB] (194)
58501 Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), and Fei Cao(曹菲)
  Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar
    Chin. Phys. B   2023 Vol.32 (5): 58501-058501 [Abstract] (224) [HTML 0 KB] [PDF 2419 KB] (90)
58504 Kaizhe Jiang(蒋铠哲), Xiaodong Zhang(张孝冬), Chuan Tian(田川), Shengrong Zhang(张升荣),Liqiang Zheng(郑理强), Rongzhao He(赫荣钊), and Chong Shen(沈重)
  A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode
    Chin. Phys. B   2023 Vol.32 (5): 58504-058504 [Abstract] (223) [HTML 1 KB] [PDF 1406 KB] (343)
57305 Wen-Hao Zhang(张文浩), Ma-Guang Zhu(朱马光), Kang-Hua Yu(余康华), Cheng-Zhan Li(李诚瞻),Jun Wang(王俊), Li Xiang(向立), and Yu-Wei Wang(王雨薇)
  Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms
    Chin. Phys. B   2023 Vol.32 (5): 57305-057305 [Abstract] (209) [HTML 1 KB] [PDF 917 KB] (216)
48101 Hao Yu(于昊), Ying Xie(谢颖), Jiahui Wei(魏佳辉), Peiqing Zhang(张培晴),Zhiying Cui(崔志英), and Haohai Yu(于浩海)
  Resonant perfect absorption of molybdenum disulfide beyond the bandgap
    Chin. Phys. B   2023 Vol.32 (4): 48101-048101 [Abstract] (256) [HTML 0 KB] [PDF 1068 KB] (91)
47702 Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂)
  SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current
    Chin. Phys. B   2023 Vol.32 (4): 47702-047702 [Abstract] (271) [HTML 0 KB] [PDF 719 KB] (57)
34211 Wen-Jing Zhang(张雯婧), Qing-Song Liu(刘青松), Bo Cheng(程波), Ming-Hao Chao(晁明豪),Yun Xu(徐云), and Guo-Feng Song(宋国峰)
  A three-band perfect absorber based on a parallelogram metamaterial slab with monolayer MoS2
    Chin. Phys. B   2023 Vol.32 (3): 34211-034211 [Abstract] (257) [HTML 1 KB] [PDF 872 KB] (65)
37302 Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需)
  Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor
    Chin. Phys. B   2023 Vol.32 (3): 37302-037302 [Abstract] (320) [HTML 1 KB] [PDF 867 KB] (259)
28504 Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平)
  Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation
    Chin. Phys. B   2023 Vol.32 (2): 28504-028504 [Abstract] (320) [HTML 1 KB] [PDF 1582 KB] (141)
28503 Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏)
  High performance SiC trench-type MOSFET with an integrated MOS-channel diode
    Chin. Phys. B   2023 Vol.32 (2): 28503-028503 [Abstract] (392) [HTML 0 KB] [PDF 1793 KB] (350)
17901 Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒)
  Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2
    Chin. Phys. B   2023 Vol.32 (1): 17901-017901 [Abstract] (275) [HTML 1 KB] [PDF 1771 KB] (104)
18501 Yi Zhu(朱翊), Hongliang Lv(吕红亮), Yuming Zhang(张玉明), Ziji Jia(贾紫骥), Jiale Sun(孙佳乐), Zhijun Lyu(吕智军), and Bin Lu(芦宾)
  MoS2/Si tunnel diodes based on comprehensive transfer technique
    Chin. Phys. B   2023 Vol.32 (1): 18501-018501 [Abstract] (394) [HTML 1 KB] [PDF 647 KB] (156)
128502 Wen Deng(邓文), Li-Sheng Wang(汪礼胜), Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔)
  High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response
    Chin. Phys. B   2022 Vol.31 (12): 128502-128502 [Abstract] (274) [HTML 0 KB] [PDF 2564 KB] (76)
117302 Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君)
  Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors
    Chin. Phys. B   2022 Vol.31 (11): 117302-117302 [Abstract] (317) [HTML 1 KB] [PDF 1551 KB] (117)
110303 Tao Liu(刘涛), Shuo Zhao(赵硕), Ivan B. Djordjevic, Shuyu Liu(刘舒宇), Sijia Wang(王思佳), Tong Wu(吴彤), Bin Li(李斌), Pingping Wang(王平平), and Rongxiang Zhang(张荣香)
  Analysis of atmospheric effects on the continuous variable quantum key distribution
    Chin. Phys. B   2022 Vol.31 (11): 110303-110303 [Abstract] (296) [HTML 0 KB] [PDF 843 KB] (71)
98502 Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇)
  Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure
    Chin. Phys. B   2022 Vol.31 (9): 98502-098502 [Abstract] (336) [HTML 0 KB] [PDF 1544 KB] (181)
97303 Chenkai Zhu(朱晨凯), Linna Zhao(赵琳娜), Zhuo Yang(杨卓), and Xiaofeng Gu(顾晓峰)
  Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress
    Chin. Phys. B   2022 Vol.31 (9): 97303-097303 [Abstract] (364) [HTML 0 KB] [PDF 3307 KB] (100)
97401 Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬)
  Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
    Chin. Phys. B   2022 Vol.31 (9): 97401-097401 [Abstract] (352) [HTML 0 KB] [PDF 1088 KB] (119)
94702 Minghao Yu(喻明浩), Zeyang Qiu(邱泽洋), Bo Lv(吕博), and Zhe Wang(王哲)
  Numerical simulation of the thermal non-equilibrium flow-field characteristics of a hypersonic Apollo-like vehicle
    Chin. Phys. B   2022 Vol.31 (9): 94702-094702 [Abstract] (404) [HTML 0 KB] [PDF 7678 KB] (128)
97801 Xiao-Dong Huang(黄晓东), Meng Zhang(张梦), Lun-Hua Deng(邓伦华), Shan-Biao Pang(庞山彪), Ke Liu(刘珂), and Huai-Liang Xu(徐淮良)
  Measurement of CO, HCN, and NO productions in atmospheric reaction induced by femtosecond laser filament
    Chin. Phys. B   2022 Vol.31 (9): 97801-097801 [Abstract] (326) [HTML 1 KB] [PDF 1175 KB] (93)
97304 Ce Bian(边策), Jianwei Shi(史建伟), Xinfeng Liu(刘新风), Yang Yang(杨洋), Haitao Yang(杨海涛), and Hongjun Gao(高鸿钧)
  Optical second-harmonic generation of Janus MoSSe monolayer
    Chin. Phys. B   2022 Vol.31 (9): 97304-097304 [Abstract] (523) [HTML 1 KB] [PDF 1159 KB] (280)
88105 Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧)
  Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition
    Chin. Phys. B   2022 Vol.31 (8): 88105-088105 [Abstract] (674) [HTML 1 KB] [PDF 1277 KB] (508)
87803 Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星)
  Enhanced photoluminescence of monolayer MoS2 on stepped gold structure
    Chin. Phys. B   2022 Vol.31 (8): 87803-087803 [Abstract] (377) [HTML 1 KB] [PDF 1320 KB] (104)
87101 Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉)
  Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain
    Chin. Phys. B   2022 Vol.31 (8): 87101-087101 [Abstract] (394) [HTML 0 KB] [PDF 4396 KB] (117)
87302 Jiahao Yuan(袁嘉浩), Mengzhou Liao(廖梦舟), Zhiheng Huang(黄智恒), Jinpeng Tian(田金朋), Yanbang Chu(褚衍邦), Luojun Du(杜罗军), Wei Yang(杨威), Dongxia Shi(时东霞), Rong Yang(杨蓉), and Guangyu Zhang(张广宇)
  Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation
    Chin. Phys. B   2022 Vol.31 (8): 87302-087302 [Abstract] (607) [HTML 1 KB] [PDF 5416 KB] (245)
80507 Yi-Xuan Shan(单仪萱), Hui-Lan Yang(杨惠兰), Hong-Bin Wang(王宏斌), Shuai Zhang(张帅), Ying Li(李颖), and Gui-Zhi Xu(徐桂芝)
  Effect of astrocyte on synchronization of thermosensitive neuron-astrocyte minimum system
    Chin. Phys. B   2022 Vol.31 (8): 80507-080507 [Abstract] (313) [HTML 0 KB] [PDF 9045 KB] (98)
77701 Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘)
  Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric
    Chin. Phys. B   2022 Vol.31 (7): 77701-077701 [Abstract] (408) [HTML 1 KB] [PDF 838 KB] (66)
77301 Fenghua Qi(戚凤华) and Xingfei Zhou(周兴飞)
  2-based p-n junction[J]. Chinese Physics B, 2022,31(7): 077301-077301")'/> Anisotropic refraction and valley-spin-dependent anomalous Klein tunneling in a 1T'-MoS2-based p-n junction
    Chin. Phys. B   2022 Vol.31 (7): 77301-077301 [Abstract] (315) [HTML 1 KB] [PDF 618 KB] (85)
78501 Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲)
  A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance
    Chin. Phys. B   2022 Vol.31 (7): 78501-078501 [Abstract] (440) [HTML 1 KB] [PDF 1551 KB] (157)
68401 Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦)
  A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission
    Chin. Phys. B   2022 Vol.31 (6): 68401-068401 [Abstract] (327) [HTML 1 KB] [PDF 1638 KB] (67)
66201 Lu-Lu Pei(裴露露), Peng-Fei Ju(鞠鹏飞), Li Ji(吉利), Hong-Xuan Li(李红轩),Xiao-Hong Liu(刘晓红), Hui-Di Zhou(周惠娣), and Jian-Min Chen(陈建敏)
  Vacuum current-carrying tribological behavior of MoS2-Ti films with different conductivities
    Chin. Phys. B   2022 Vol.31 (6): 66201-066201 [Abstract] (383) [HTML 1 KB] [PDF 15785 KB] (142)
60203 Jinlian Jiang(姜金连), Wei Xu(徐伟), Ping Han(韩平), and Lizhi Niu(牛立志)
  Most probable transition paths in eutrophicated lake ecosystem under Gaussian white noise and periodic force
    Chin. Phys. B   2022 Vol.31 (6): 60203-060203 [Abstract] (377) [HTML 1 KB] [PDF 2152 KB] (69)
38503 He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威)
  Analysis of the generation mechanism of the S-shaped JV curves of MoS2/Si-based solar cells
    Chin. Phys. B   2022 Vol.31 (3): 38503-038503 [Abstract] (415) [HTML 1 KB] [PDF 1468 KB] (155)
25204 Chuanjie Chen(陈传杰), Zhongqing Fang(方忠庆), Xiaofang Yang(杨晓芳), Yongsheng Fan(樊永胜), Feng Zhou(周锋), and Rugang Wang(王如刚)
  Spatial characteristics of nanosecond pulsed micro-discharges in atmospheric pressure He/H2O mixture by optical emission spectroscopy
    Chin. Phys. B   2022 Vol.31 (2): 25204-025204 [Abstract] (422) [HTML 1 KB] [PDF 1774 KB] (121)
24102 Kai Yang(杨凯), Zhensen Wu(吴振森), Xing Guo(郭兴), Jiaji Wu(吴家骥), Yunhua Cao(曹运华), Tan Qu(屈檀), and Jiyu Xue(薛积禹)
  Estimation of co-channel interference between cities caused by ducting and turbulence
    Chin. Phys. B   2022 Vol.31 (2): 24102-024102 [Abstract] (448) [HTML 0 KB] [PDF 5033 KB] (135)
14101 Yuwang Deng(邓雨旺), Qingli Zhou(周庆莉), Wanlin Liang(梁菀琳), Pujing Zhang(张朴婧), and Cunlin Zhang(张存林)
  Tunable terahertz transmission behaviors and coupling mechanism in hybrid MoS2 metamaterials
    Chin. Phys. B   2022 Vol.31 (1): 14101-014101 [Abstract] (440) [HTML 1 KB] [PDF 1399 KB] (184)
18504 Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读)
  A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode
    Chin. Phys. B   2022 Vol.31 (1): 18504-018504 [Abstract] (522) [HTML 1 KB] [PDF 733 KB] (215)
18501 Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平)
  Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET
    Chin. Phys. B   2022 Vol.31 (1): 18501-018501 [Abstract] (606) [HTML 0 KB] [PDF 2029 KB] (180)
100501 Ying Xu(徐莹) and Jun Ma(马军)
  Control of firing activities in thermosensitive neuron by activating excitatory autapse
    Chin. Phys. B   2021 Vol.30 (10): 100501-100501 [Abstract] (348) [HTML 0 KB] [PDF 1530 KB] (100)
108502 Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞)
  Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors
    Chin. Phys. B   2021 Vol.30 (10): 108502-108502 [Abstract] (512) [HTML 1 KB] [PDF 2657 KB] (164)
87305 Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
  Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure
    Chin. Phys. B   2021 Vol.30 (8): 87305-087305 [Abstract] (534) [HTML 1 KB] [PDF 830 KB] (180)
87801 Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳)
  Achieving high-performance multilayer MoSe2 photodetectors by defect engineering
    Chin. Phys. B   2021 Vol.30 (8): 87801-087801 [Abstract] (398) [HTML 1 KB] [PDF 1009 KB] (74)
78501 Jia-Xin Wang(王加鑫), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Duo-Li Li(李多力), Lin-Chun Gao(高林春), Jiang-Jiang Li(李江江), Bo Li(李博), Zheng-Sheng Han(韩郑生), and Jia-Jun Luo(罗家俊)
  Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures
    Chin. Phys. B   2021 Vol.30 (7): 78501-078501 [Abstract] (574) [HTML 1 KB] [PDF 1734 KB] (73)
77305 Yi-Dong Yuan(原义栋), Dong-Yan Zhao(赵东艳), Yan-Rong Cao(曹艳荣), Yu-Bo Wang(王于波), Jin Shao(邵瑾), Yan-Ning Chen(陈燕宁), Wen-Long He(何文龙), Jian Du(杜剑), Min Wang(王敏), Ye-Ling Peng(彭业凌), Hong-Tao Zhang(张宏涛), Zhen Fu(付振), Chen Ren(任晨), Fang Liu(刘芳), Long-Tao Zhang(张龙涛), Yang Zhao(赵扬), Ling Lv(吕玲), Yi-Qiang Zhao(赵毅强), Xue-Feng Zheng(郑雪峰), Zhi-Mei Zhou(周芝梅), Yong Wan(万勇), and Xiao-Hua Ma(马晓华)
  Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress
    Chin. Phys. B   2021 Vol.30 (7): 77305-077305 [Abstract] (449) [HTML 1 KB] [PDF 760 KB] (93)
77303 Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇)
  Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors
    Chin. Phys. B   2021 Vol.30 (7): 77303-077303 [Abstract] (528) [HTML 1 KB] [PDF 652 KB] (118)
67303 Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰)
  Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness
    Chin. Phys. B   2021 Vol.30 (6): 67303-067303 [Abstract] (527) [HTML 0 KB] [PDF 1025 KB] (122)
67102 Xiao-Shu Guo(郭小姝) and San-Dong Guo(郭三栋)
  Tuning transport coefficients of monolayer MoSi2N4 with biaxial strain
    Chin. Phys. B   2021 Vol.30 (6): 67102-067102 [Abstract] (451) [HTML 1 KB] [PDF 2264 KB] (187)
58101 Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭)
  Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature
    Chin. Phys. B   2021 Vol.30 (5): 58101-058101 [Abstract] (608) [HTML 1 KB] [PDF 1096 KB] (107)
58502 Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲)
  Improved 4H-SiC UMOSFET with super-junction shield region
    Chin. Phys. B   2021 Vol.30 (5): 58502-058502 [Abstract] (598) [HTML 1 KB] [PDF 1030 KB] (197)
57303 Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生)
  A super-junction SOI-LDMOS with low resistance electron channel
    Chin. Phys. B   2021 Vol.30 (5): 57303-057303 [Abstract] (580) [HTML 1 KB] [PDF 1674 KB] (152)
48504 Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波)
  Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs
    Chin. Phys. B   2021 Vol.30 (4): 48504- [Abstract] (477) [HTML 1 KB] [PDF 790 KB] (162)
48503 Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂)
  Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit
    Chin. Phys. B   2021 Vol.30 (4): 48503- [Abstract] (388) [HTML 1 KB] [PDF 753 KB] (296)
46301 Guoqing Wang(王国庆), Wenjing Qin(秦文静), and Jing Shi(石晶)
  Effect of strain on electrochemical performance of Janus MoSSe monolayer anode material for Li-ion batteries: First-principles study
    Chin. Phys. B   2021 Vol.30 (4): 46301- [Abstract] (349) [HTML 1 KB] [PDF 1242 KB] (190)
34201 Ya-Qian Li(李雅倩), Wen-Yue Zhu (朱文越), and Xian-Mei Qian(钱仙妹)
  Numerical simulation of super-continuum laser propagation in turbulent atmosphere
    Chin. Phys. B   2021 Vol.30 (3): 34201- [Abstract] (363) [HTML 1 KB] [PDF 687 KB] (53)
18502 Cui Yang(杨翠), Guo-Liang Peng(彭国良), Wei Mao(毛维), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
  Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node
    Chin. Phys. B   2021 Vol.30 (1): 18502- [Abstract] (448) [HTML 1 KB] [PDF 1320 KB] (236)
18102 Zhao Li(李钊), Jing-Ping Xu(徐静平), Lu Liu(刘璐), and Xin-Yuan Zhao(赵心愿)
  Enhanced mobility of MoS2 field-effect transistors by combining defect passivation with dielectric-screening effect
    Chin. Phys. B   2021 Vol.30 (1): 18102- [Abstract] (573) [HTML 1 KB] [PDF 878 KB] (173)
107302 Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃)
  Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments
    Chin. Phys. B   2020 Vol.29 (10): 107302- [Abstract] (624) [HTML 1 KB] [PDF 1123 KB] (79)
104204 Ya-Fei Zhang(张亚飞), Yu-Tao Feng(冯玉涛)†, Di Fu(傅頔), Peng-Chong Wang(王鹏冲), Jian Sun(孙剑), and Qing-Lan Bai(白清兰)
  Dependence of interferogram phase on incident wavenumber and phase stability of Doppler asymmetric spatial heterodyne spectroscopy
    Chin. Phys. B   2020 Vol.29 (10): 104204- [Abstract] (417) [HTML 1 KB] [PDF 777 KB] (99)
106103 Li-Jun Xu(徐丽君), Peng-Fei Zhai(翟鹏飞)†, Sheng-Xia Zhang(张胜霞), Jian Zeng(曾健), Pei-Pei Hu(胡培培), Zong-Zhen Li(李宗臻), Li Liu(刘丽), You-Mei Sun(孙友梅), and Jie Liu(刘杰)‡
  Characterization of swift heavy ion tracks in MoS2 by transmission electron microscopy
    Chin. Phys. B   2020 Vol.29 (10): 106103- [Abstract] (459) [HTML 1 KB] [PDF 1459 KB] (166)
97301 Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯)
  Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
    Chin. Phys. B   2020 Vol.29 (9): 97301-097301 [Abstract] (629) [HTML 0 KB] [PDF 547 KB] (66)
97102 Long Lin(林龙), Yi-Peng Guo(郭义鹏), Chao-Zheng He(何朝政), Hua-Long Tao(陶华龙), Jing-Tao Huang(黄敬涛), Wei-Yang Yu(余伟阳), Rui-Xin Chen(陈瑞欣), Meng-Si Lou(娄梦思), Long-Bin Yan(闫龙斌)
  First-principles study of magnetism of 3d transition metals and nitrogen co-doped monolayer MoS2
    Chin. Phys. B   2020 Vol.29 (9): 97102-097102 [Abstract] (581) [HTML 0 KB] [PDF 1403 KB] (93)
97201 Xiaozhang Chen(陈孝章), Lehua Gu(顾乐华), Lan Liu(刘岚), Huawei Chen(陈华威), Jingyu Li(栗敬俣), Chunsen Liu(刘春森), Peng Zhou(周鹏)
  Temperature-switching logic in MoS2 single transistors
    Chin. Phys. B   2020 Vol.29 (9): 97201-097201 [Abstract] (705) [HTML 0 KB] [PDF 1020 KB] (138)
98704 Ying Xu(徐莹), Minghua Liu(刘明华), Zhigang Zhu(朱志刚), Jun Ma(马军)
  Dynamics and coherence resonance in a thermosensitive neuron driven by photocurrent
    Chin. Phys. B   2020 Vol.29 (9): 98704-098704 [Abstract] (700) [HTML 0 KB] [PDF 2495 KB] (173)
96701 He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙)
  Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor
    Chin. Phys. B   2020 Vol.29 (9): 96701-096701 [Abstract] (654) [HTML 0 KB] [PDF 1725 KB] (194)
77101 Lu Li(栗潞), Xiu-Hua Cui(崔秀花), Hai-Bin Cao(曹海宾), Yi Jiang(姜轶), Hai-Ming Duan(段海明), Qun Jing(井群), Jing Liu(刘静), Qian Wang(王倩)
  Structural evolution and magnetic properties of ScLin (n=2-13) clusters: A PSO and DFT investigation
    Chin. Phys. B   2020 Vol.29 (7): 77101-077101 [Abstract] (657) [HTML 0 KB] [PDF 3996 KB] (118)
64203 Hao Ni(倪昊), Chunhao Liang(梁春豪), Fei Wang(王飞), Yahong Chen(陈亚红), Sergey A. Ponomarenko, Yangjian Cai(蔡阳健)
  Non-Gaussian statistics of partially coherent light inatmospheric turbulence
    Chin. Phys. B   2020 Vol.29 (6): 64203-064203 [Abstract] (650) [HTML 1 KB] [PDF 587 KB] (183)
58801 Lu Liu(刘璐), Sheng-Li Zhang(张生利), Jian-Yu Wu(吴建宇), Wei-Huang Wang(王伟煌), Wei Liu(刘玮), Li Wu(武莉), Yi Zhang(张毅)
  Current improvement in substrate structured Sb2S3 solar cells with MoSe2 interlayer
    Chin. Phys. B   2020 Vol.29 (5): 58801-058801 [Abstract] (548) [HTML 1 KB] [PDF 1523 KB] (195)
57801 Nguyen Manh Hung, Le Thi Mai Oanh, Lam Thi Hang, Pham Do Chung, Pham Thi Duyen, Dao Viet Thang, Nguyen Van Minh
  Effect of heating time on structural, morphology, optical, and photocatalytic properties of g-C3N4 nanosheets
    Chin. Phys. B   2020 Vol.29 (5): 57801-057801 [Abstract] (589) [HTML 1 KB] [PDF 903 KB] (96)
37301 Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯)
  High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
    Chin. Phys. B   2020 Vol.29 (3): 37301-037301 [Abstract] (831) [HTML 1 KB] [PDF 1104 KB] (255)
38505 Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦)
  Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
    Chin. Phys. B   2020 Vol.29 (3): 38505-038505 [Abstract] (518) [HTML 1 KB] [PDF 667 KB] (124)
20301 Shu-Jing Zhang(张淑静), Chen Xiao(肖晨), Chun Zhou(周淳), Xiang Wang(汪翔), Jian-Shu Yao(要建姝), Hai-Long Zhang(张海龙), Wan-Su Bao(鲍皖苏)
  Performance analysis of continuous-variable measurement-device-independent quantum key distribution under diverse weather conditions
    Chin. Phys. B   2020 Vol.29 (2): 20301-020301 [Abstract] (643) [HTML 1 KB] [PDF 1234 KB] (181)
27401 H Simchi
  A simple tight-binding approach to topological superconductivity in monolayer MoS2
    Chin. Phys. B   2020 Vol.29 (2): 27401-027401 [Abstract] (618) [HTML 1 KB] [PDF 1548 KB] (142)
128101 Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平)
  Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
    Chin. Phys. B   2019 Vol.28 (12): 128101-128101 [Abstract] (717) [HTML 1 KB] [PDF 1778 KB] (187)
127703 Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平)
  Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content
    Chin. Phys. B   2019 Vol.28 (12): 127703-127703 [Abstract] (483) [HTML 1 KB] [PDF 1950 KB] (121)
88501 Fei Hou(侯飞), Ruibo Chen(陈瑞博), Feibo Du(杜飞波), Jizhi Liu(刘继芝), Zhiwei Liu(刘志伟), Juin J Liou(刘俊杰)
  Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process
    Chin. Phys. B   2019 Vol.28 (8): 88501-088501 [Abstract] (689) [HTML 1 KB] [PDF 1117 KB] (232)
86104 Dahua Ren(任达华), Xingyi Tan(谭兴毅), Teng Zhang(张腾), Yuan Zhang(张源)
  Electronic and optical properties of GaN-MoS2 heterostructure from first-principles calculations
    Chin. Phys. B   2019 Vol.28 (8): 86104-086104 [Abstract] (662) [HTML 1 KB] [PDF 901 KB] (280)
80304 Shu-Jing Zhang(张淑静), Hong-Xin Ma(马鸿鑫), Xiang Wang(汪翔), Chun Zhou(周淳), Wan-Su Bao(鲍皖苏), Hai-Long Zhang(张海龙)
  Temperature effects on atmospheric continuous-variable quantum key distribution
    Chin. Phys. B   2019 Vol.28 (8): 80304-080304 [Abstract] (726) [HTML 1 KB] [PDF 1885 KB] (185)
58503 Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南)
  Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation
    Chin. Phys. B   2019 Vol.28 (5): 58503-058503 [Abstract] (707) [HTML 1 KB] [PDF 1019 KB] (217)
37201 Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园)
  Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate
    Chin. Phys. B   2019 Vol.28 (3): 37201-037201 [Abstract] (685) [HTML 1 KB] [PDF 1984 KB] (159)
25202 Yi-Nan Wang(王一男), Shuai-Xing Li(李帅星), Yue Liu(刘悦), Li Wang(王莉)
  Effects of secondary electron emission on plasma characteristics in dual-frequency atmospheric pressure helium discharge by fluid modeling
    Chin. Phys. B   2019 Vol.28 (2): 25202-025202 [Abstract] (854) [HTML 1 KB] [PDF 678 KB] (360)
17301 Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇)
  Pressure-mediated contact quality improvement between monolayer MoS2 and graphite
    Chin. Phys. B   2019 Vol.28 (1): 17301-017301 [Abstract] (807) [HTML 1 KB] [PDF 1311 KB] (340)
104207 Lin-Dong Ma(马林东), Yu-Dong Li(李豫东), Lin Wen(文林), Jie Feng(冯婕), Xiang Zhang(张翔), Tian-Hui Wang(王田珲), Yu-Long Cai(蔡毓龙), Zhi-Ming Wang(王志铭), Qi Guo(郭旗)
  Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
    Chin. Phys. B   2018 Vol.27 (10): 104207-104207 [Abstract] (695) [HTML 1 KB] [PDF 604 KB] (225)
68103 Xuan Zhao(赵宣), Da-Wei He(何大伟), Yong-Sheng Wang(王永生), Chen Fu(付晨)
  In situ growth of different numbers of gold nanoparticles on MoS2 with enhanced electrocatalytic activity for hydrogen evolution reaction
    Chin. Phys. B   2018 Vol.27 (6): 68103-068103 [Abstract] (584) [HTML 1 KB] [PDF 2541 KB] (194)
66105 Zhi-Feng Lei(雷志锋), Zhan-Gang Zhang(张战刚), Yun-Fei En(恩云飞), Yun Huang(黄云)
  Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
    Chin. Phys. B   2018 Vol.27 (6): 66105-066105 [Abstract] (728) [HTML 1 KB] [PDF 1455 KB] (196)
66103 Cheng Zhang(张诚), Shaolong Tang(唐少龙), Mingsen Deng(邓明森), Youwei Du(都有为)
  Li adsorption on monolayer and bilayer MoS2 as an ideal substrate for hydrogen storage
    Chin. Phys. B   2018 Vol.27 (6): 66103-066103 [Abstract] (624) [HTML 0 KB] [PDF 5245 KB] (226)
56104 Xue Li(李雪), Da-Wei He(何大伟), Yong-Sheng Wang(王永生), Yin Hu(胡音), Xuan Zhao(赵宣), Chen Fu(付晨), Jing-Yan Wu(吴静燕)
  Facile and controllable synthesis of molybdenum disulfide quantum dots for highly sensitive and selective sensing of copper ions
    Chin. Phys. B   2018 Vol.27 (5): 56104-056104 [Abstract] (538) [HTML 1 KB] [PDF 1921 KB] (483)
55207 Rui Zhang(张锐), Jin-song Yu(於劲松), Jun Huang(黄骏), Guang-liang Chen(陈光良), Xin Liu(刘欣), Wei Chen(陈维), Xing-quan Wang(王兴权), Chao-rong Li(李超荣)
  Sterilization of mycete attached on the unearthed silk fabrics by an atmospheric pressure plasma jet
    Chin. Phys. B   2018 Vol.27 (5): 55207-055207 [Abstract] (416) [HTML 1 KB] [PDF 2617 KB] (246)
55202 Zhao-Quan Chen(陈兆权), Ben-Kuan Zhou(周本宽), Huang Zhang(张煌), Ling-Li Hong(洪伶俐), Chang-Lin Zou(邹长林), Ping Li(李平), Wei-Dong Zhao(赵卫东), Xiao-Dong Liu(刘晓东), Olga Stepanova, A A Kudryavtsev
  Characteristic plume morphologies of atmospheric Ar and He plasma jets excited by a pulsed microwave hairpin resonator
    Chin. Phys. B   2018 Vol.27 (5): 55202-055202 [Abstract] (554) [HTML 1 KB] [PDF 1664 KB] (250)
54215 Shuai Hu(胡帅), Taichang Gao(高太长), Hao Li(李浩), Lei Liu(刘磊), Ming Chen(陈鸣), Bo Yang(杨波)
  Light-scattering model for aerosol particles with irregular shapes and inhomogeneous compositions using a parallelized pseudo-spectral time-domain technique
    Chin. Phys. B   2018 Vol.27 (5): 54215-054215 [Abstract] (503) [HTML 1 KB] [PDF 765 KB] (189)
54203 Mingjian Cheng(程明建), Lixin Guo(郭立新), Jiangting Li(李江挺)
  Influence of moderate-to-strong anisotropic non-Kolmogorov turbulence on intensity fluctuations of a Gaussian-Schell model beam in marine atmosphere
    Chin. Phys. B   2018 Vol.27 (5): 54203-054203 [Abstract] (715) [HTML 1 KB] [PDF 596 KB] (288)
47302 Le Yu(余乐), Di Liu(刘頔), Xiao-Zhuo Qi(祁晓卓), Xiao Xiong(熊霄), Lan-Tian Feng(冯兰天), Ming Li(李明), Guo-Ping Guo(郭国平), Guang-Can Guo(郭光灿), Xi-Feng Ren(任希锋)
  Gap plasmon-enhanced photoluminescence of monolayer MoS2 in hybrid nanostructure
    Chin. Phys. B   2018 Vol.27 (4): 47302-047302 [Abstract] (755) [HTML 1 KB] [PDF 1046 KB] (326)
48502 Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo
  Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator
    Chin. Phys. B   2018 Vol.27 (4): 48502-048502 [Abstract] (758) [HTML 1 KB] [PDF 1087 KB] (213)
40701 Xiang Chen(陈祥), Chen-Guang Yang(杨晨光), Mai Hu(胡迈), Jian-Kang Shen(沈建康), Er-Chao Niu(牛二超), Zhen-Yu Xu(许振宇), Xue-Li Fan(范雪丽), Min Wei(魏敏), Lu Yao(姚路), Ya-Bai He(何亚柏), Jian-Guo Liu(刘建国), Rui-Feng Kan(阚瑞峰)
  Highly-sensitive NO, NO2, and NH3 measurements with an open-multipass cell based on mid-infrared wavelength modulation spectroscopy
    Chin. Phys. B   2018 Vol.27 (4): 40701-040701 [Abstract] (627) [HTML 1 KB] [PDF 1559 KB] (342)
37802 Fang Liang(梁芳), Hejun Xu(徐何军), Xing Wu(吴幸), Chaolun Wang(王超伦), Chen Luo(骆晨), Jian Zhang(张健)
  Raman spectroscopy characterization of two-dimensional materials
    Chin. Phys. B   2018 Vol.27 (3): 37802-037802 [Abstract] (1038) [HTML 1 KB] [PDF 6019 KB] (2072)
34402 Xiangjun Liu(刘向军), Yong-Wei Zhang(张永伟)
  Thermal properties of transition-metal dichalcogenide
    Chin. Phys. B   2018 Vol.27 (3): 34402-034402 [Abstract] (713) [HTML 1 KB] [PDF 3044 KB] (773)
34201 Jing Ma(马晶), Yu-Long Fu(付玉龙), Si-Yuan Yu(于思源), Xiao-Long Xie(谢小龙), Li-Ying Tan(谭立英)
  Further analysis of scintillation index for a laser beam propagating through moderate-to-strong non-Kolmogorov turbulence based on generalized effective atmospheric spectral model
    Chin. Phys. B   2018 Vol.27 (3): 34201-034201 [Abstract] (697) [HTML 1 KB] [PDF 576 KB] (225)
28103 Xiao-Qiang Xie(解晓强), Ying-Zi Peng(彭英姿), Qi-Ye Zheng(郑奇烨), Yuan Li(李源), Ji Chen(陈吉)
  Observation of oscillations in the transport for atomic layer MoS2
    Chin. Phys. B   2018 Vol.27 (2): 28103-028103 [Abstract] (610) [HTML 0 KB] [PDF 595 KB] (178)
27201 Jun Wang(王军), Xiao-Mei Peng(彭小梅), Zhi-Jun Liu(刘志军), Lin Wang(王林), Zhen Luo(罗震), Dan-Dan Wang(王丹丹)
  Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET
    Chin. Phys. B   2018 Vol.27 (2): 27201-027201 [Abstract] (835) [HTML 0 KB] [PDF 2011 KB] (208)
18101 Lu Zhang(张璐), Yongsheng Wang(王永生), Yanfang Dong(董艳芳), Xuan Zhao(赵宣), Chen Fu(付晨), Dawei He(何大伟)
  Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition
    Chin. Phys. B   2018 Vol.27 (1): 18101-018101 [Abstract] (686) [HTML 0 KB] [PDF 2010 KB] (311)
128102 He-Ju Xu(许贺菊), Jian-Song Mi(米建松), Yun Li(李云), Bin Zhang(张彬), Ri-Dong Cong(丛日东), Guang-Sheng Fu(傅广生), Wei Yu(于威)
  Nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (12): 128102-128102 [Abstract] (570) [HTML 1 KB] [PDF 2747 KB] (456)
127701 Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门)
  Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
    Chin. Phys. B   2017 Vol.26 (12): 127701-127701 [Abstract] (680) [HTML 0 KB] [PDF 659 KB] (283)
127302 Yan-Bing Xu(徐雁冰), Hong-Guan Yang(杨红官)
  Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors
    Chin. Phys. B   2017 Vol.26 (12): 127302-127302 [Abstract] (540) [HTML 0 KB] [PDF 886 KB] (210)
114212 Lindong Ma(马林东), Yudong Li(李豫东), Qi Guo(郭旗), Lin Wen(文林), Dong Zhou(周东), Jie Feng(冯婕), Yuan Liu(刘元), Junzhe Zeng(曾骏哲), Xiang Zhang(张翔), Tianhui Wang(王田珲)
  Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
    Chin. Phys. B   2017 Vol.26 (11): 114212-114212 [Abstract] (627) [HTML 1 KB] [PDF 643 KB] (325)
114207 Xiao-zhou Cui(崔小舟), Xiao-li Yin(尹霄丽), Huan Chang(常欢), Zhi-chao Zhang(张志超), Yong-jun Wang(王拥军), Guo-hua Wu(吴国华)
  A new method of calculating the orbital angular momentum spectra of Laguerre-Gaussian beams in channels with atmospheric turbulence
    Chin. Phys. B   2017 Vol.26 (11): 114207-114207 [Abstract] (825) [HTML 0 KB] [PDF 507 KB] (315)
114205 Xiao-Fa Wang(王小发), Xiao-Ling Peng(彭晓玲), Qiu-Xia Jiang(姜秋霞), Xiao-Hui Gu(顾小辉), Jun-Hong Zhang(张俊红), Xue-Feng Mao(毛雪峰), Su-Zhen Yuan(袁素贞)
  2-μm mode-locked nanosecond fiber laser based on MoS2 saturable absorber
    Chin. Phys. B   2017 Vol.26 (11): 114205-114205 [Abstract] (622) [HTML 0 KB] [PDF 378 KB] (262)
108201 Zhiqian Zhao(赵治乾), Jing Zhang(张静), Xiaolei Wang(王晓磊), Shuhua Wei(魏淑华), Chao Zhao(赵超), Wenwu Wang(王文武)
  Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation
    Chin. Phys. B   2017 Vol.26 (10): 108201-108201 [Abstract] (530) [HTML 1 KB] [PDF 447 KB] (217)
98901 Norazlina M S, Dheepan Chakravarthii M K, Shanmugan S, Mutharasu D, Shahrom Mahmud
  Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement
    Chin. Phys. B   2017 Vol.26 (9): 98901-098901 [Abstract] (565) [HTML 1 KB] [PDF 3119 KB] (559)
98401 Xingxing Zhang(张行行), Xiaoli Ji(纪小丽), Yiming Liao(廖轶明), Jingyu Peng(彭静宇), Chenxin Zhu(朱晨昕), Feng Yan(闫锋)
  Performance enhancement of CMOS terahertz detector by drain current
    Chin. Phys. B   2017 Vol.26 (9): 98401-098401 [Abstract] (726) [HTML 1 KB] [PDF 612 KB] (256)
88101 Wang Zhang(张望), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Qi-Feng Lv(吕奇峰), Xiang-Hai Ji(季祥海), Tao Yang(杨涛), Fu-Hua Yang(杨富华)
  Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate
    Chin. Phys. B   2017 Vol.26 (8): 88101-088101 [Abstract] (620) [HTML 1 KB] [PDF 1726 KB] (196)
65206 Ding-Zong Zhang(张定宗), Yan-Hui Wang(王艳辉), De-Zhen Wang(王德真)
  Numerical study on the discharge characteristics and nonlinear behaviors of atmospheric pressure coaxial electrode dielectric barrier discharges
    Chin. Phys. B   2017 Vol.26 (6): 65206-065206 [Abstract] (599) [HTML 1 KB] [PDF 958 KB] (231)
64202 Xiang Yan(闫香), Peng-Fei Zhang(张鹏飞), Jing-Hui Zhang(张京会), Xiao-Xing Feng(冯晓星), Chun-Hong Qiao(乔春红), Cheng-Yu Fan(范承玉)
  Effect of atmospheric turbulence on entangled orbital angular momentum three-qubit state
    Chin. Phys. B   2017 Vol.26 (6): 64202-064202 [Abstract] (828) [HTML 1 KB] [PDF 413 KB] (268)
47306 Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
  Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions
    Chin. Phys. B   2017 Vol.26 (4): 47306-047306 [Abstract] (803) [HTML 1 KB] [PDF 9012 KB] (389)
35201 Qi Wang(王奇), Xiao-Li Yu(于晓丽), De-Zhen Wang(王德真)
  Numerical study on the gas heating mechanism in pulse-modulated radio-frequency glow discharge
    Chin. Phys. B   2017 Vol.26 (3): 35201-035201 [Abstract] (651) [HTML 1 KB] [PDF 413 KB] (241)
24201 Zhen-Zhen Song(宋真真), Zheng-Jun Liu(刘正君), Ke-Ya Zhou(周可雅), Qiong-Ge Sun(孙琼阁), Shu-Tian Liu(刘树田)
  Propagation factor of electromagnetic concentric rings Schell-model beams in non-Kolmogorov turbulence
    Chin. Phys. B   2017 Vol.26 (2): 24201-024201 [Abstract] (570) [HTML 1 KB] [PDF 5900 KB] (303)
19501 Shi-Bei Guo(郭拾贝), Kai Zhong(钟凯), Mao-Rong Wang(王茂榕), Chu Liu(刘楚), Yong Xiao(肖勇), Wen-Peng Wang(王文鹏), De-Gang Xu(徐德刚), Jian-Quan Yao(姚建铨)
  Theoretical and experimental study on broadband terahertz atmospheric transmission characteristics
    Chin. Phys. B   2017 Vol.26 (1): 19501-019501 [Abstract] (685) [HTML 1 KB] [PDF 998 KB] (347)
27103 Ping Liu(刘萍), Zhen-Zhen Qin(秦真真), Yun-Liang Yue(乐云亮), Xu Zuo(左旭)
  Structural, electronic, and magnetic properties of vanadium atom-adsorbed MoSe2 monolayer
    Chin. Phys. B   2017 Vol.26 (2): 27103-027103 [Abstract] (596) [HTML 1 KB] [PDF 1520 KB] (675)
27101 Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜)
  Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
    Chin. Phys. B   2017 Vol.26 (2): 27101-027101 [Abstract] (687) [HTML 1 KB] [PDF 651 KB] (378)
118502 Han-Han Lu(卢汉汉), Jing-Ping Xu(徐静平), Lu Liu(刘璐), Pui-To Lai(黎沛涛), Wing-Man Tang(邓咏雯)
  Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors
    Chin. Phys. B   2016 Vol.25 (11): 118502-118502 [Abstract] (567) [HTML 0 KB] [PDF 1483 KB] (382)
114215 Li Zou(邹丽), Le Wang(王乐), Sheng-Mei Zhao(赵生妹), Han-Wu Chen(陈汉武)
  Turbulence mitigation scheme based on multiple-user detection in an orbital-angular-momentum multiplexed system
    Chin. Phys. B   2016 Vol.25 (11): 114215-114215 [Abstract] (515) [HTML 1 KB] [PDF 436 KB] (427)
114212 Wen-Yi Shao(邵文毅), Hao Xian(鲜 浩)
  Optimizing calculation of phase screen distribution with minimum condition along an inhomogeneous turbulent path
    Chin. Phys. B   2016 Vol.25 (11): 114212-114212 [Abstract] (677) [HTML 1 KB] [PDF 314 KB] (353)
108503 Shweta Tripathi
  A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
    Chin. Phys. B   2016 Vol.25 (10): 108503-108503 [Abstract] (613) [HTML 1 KB] [PDF 5433 KB] (683)
105205 Mu-Yang Qian(钱沐杨), San-Qiu Liu(刘三秋), Xue-Kai Pei(裴学凯), Xin-Pei Lu(卢新培), Jia-Liang Zhang(张家良), De-Zhen Wang(王德真)
  LIF diagnostics of hydroxyl radical in a methanol containing atmospheric-pressure plasma jet
    Chin. Phys. B   2016 Vol.25 (10): 105205-105205 [Abstract] (688) [HTML 1 KB] [PDF 1720 KB] (649)
96110 Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella
  Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors
    Chin. Phys. B   2016 Vol.25 (9): 96110-096110 [Abstract] (817) [HTML 1 KB] [PDF 251 KB] (327)
84204 Xiang Yan(闫香), Peng-Fei Zhang(张鹏飞), Jing-Hui Zhang(张京会), Chun-Hong Qiao(乔春红), Cheng-Yu Fan(范承玉)
  Quantum polarization fluctuations of partially coherent dark hollow beams in non-Kolmogorov turbulence atmosphere
    Chin. Phys. B   2016 Vol.25 (8): 84204-084204 [Abstract] (662) [HTML 1 KB] [PDF 379 KB] (409)
78201 Fengyun Yang(杨凤云), Kaige Wang(王凯歌), Dan Sun(孙聃), Wei Zhao(赵伟), Hai-qing Wang(王海青), Xin He(何鑫), Gui-ren Wang(王归仁), Jin-tao Bai(白晋涛)
  Direct observation of λ -DNA molecule reversal movement within microfluidic channels under electric field with single molecule imaging technique
    Chin. Phys. B   2016 Vol.25 (7): 78201-078201 [Abstract] (578) [HTML 1 KB] [PDF 1087 KB] (334)
70503 Yu Zhang(张钰), Xinmiao Lu(逯鑫淼), Guangyi Wang(王光义), Yongcai Hu(胡永才), Jiangtao Xu(徐江涛)
  Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
    Chin. Phys. B   2016 Vol.25 (7): 70503-070503 [Abstract] (773) [HTML 1 KB] [PDF 1503 KB] (2117)
67306 Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜)
  Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip
    Chin. Phys. B   2016 Vol.25 (6): 67306-067306 [Abstract] (754) [HTML 1 KB] [PDF 1284 KB] (322)
64208 F Boufalah, L Dalil-Essakali, H Nebdi, A Belafhal
  Effect of turbulent atmosphere on the on-axis average intensity of Pearcey-Gaussian beam
    Chin. Phys. B   2016 Vol.25 (6): 64208-064208 [Abstract] (665) [HTML 1 KB] [PDF 9477 KB] (235)
58104 Ying-Zi Peng(彭英姿), Yang Song(宋扬), Xiao-Qiang Xie(解晓强), Yuan Li(李源), Zheng-Hong Qian(钱正洪), Ru Bai(白茹)
  Characterization of atomic-layer MoS2 synthesized using a hot filament chemical vapor deposition method
    Chin. Phys. B   2016 Vol.25 (5): 58104-058104 [Abstract] (644) [HTML 1 KB] [PDF 1925 KB] (549)
38502 Yan-hui Xin(辛艳辉), Sheng Yuan(袁胜), Ming-tang Liu(刘明堂),Hong-xia Liu(刘红侠), He-cai Yuan(袁合才)
  Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs
    Chin. Phys. B   2016 Vol.25 (3): 38502-038502 [Abstract] (723) [HTML 1 KB] [PDF 339 KB] (304)
27306 Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉)
  A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
    Chin. Phys. B   2016 Vol.25 (2): 27306-027306 [Abstract] (831) [HTML 1 KB] [PDF 857 KB] (922)
28702 Chun Liu(刘纯), Chang Wang(王长), Jun-Cheng Cao(曹俊诚)
  Performance analysis of LDPC codes on OOK terahertz wireless channels
    Chin. Phys. B   2016 Vol.25 (2): 28702-028702 [Abstract] (703) [HTML 1 KB] [PDF 503 KB] (387)
24101 Zheng Sun(孙正), Hui Ning(宁辉), Jing Tang(唐敬), Yong-Jie Xie(谢永杰), Peng-Fei Shi(石鹏飞), Jian-Hua Wang(王建华), Ke Wang(王柯)
  Anomalous propagation conditions of electromagnetic wave observed over Bosten Lake, China in July and August, 2014
    Chin. Phys. B   2016 Vol.25 (2): 24101-024101 [Abstract] (634) [HTML 1 KB] [PDF 2936 KB] (665)
15202 Mu-Yang Qian(钱沐杨), Cong-Ying Yang(杨从影), Zhen-dong Wang(王震东), Xiao-Chang Chen(陈小昌), San-Qiu Liu(刘三秋), De-Zhen Wang(王德真)
  Numerical study of the effect of water content on OH production in a pulsed-dc atmospheric pressure helium-air plasma jet
    Chin. Phys. B   2016 Vol.25 (1): 15202-015202 [Abstract] (707) [HTML 1 KB] [PDF 479 KB] (393)
127304 Liu Chao-Wen (刘超文), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Lu Han-Han (卢汉汉)
  High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
    Chin. Phys. B   2015 Vol.24 (12): 127304-127304 [Abstract] (693) [HTML 1 KB] [PDF 343 KB] (360)
126701 Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻)
  Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses
    Chin. Phys. B   2015 Vol.24 (12): 126701-126701 [Abstract] (629) [HTML 1 KB] [PDF 305 KB] (418)
125203 Qian Mu-Yang (钱沐杨), Yang Cong-Ying (杨从影), Chen Xiao-Chang (陈小昌), Liu San-Qiu (刘三秋), Yan Wen (晏雯), Liu Fu-Cheng (刘富成), Wang De-Zhen (王德真)
  A two-dimensional model of He/O2 atmospheric pressure plasma needle discharge
    Chin. Phys. B   2015 Vol.24 (12): 125203-125203 [Abstract] (669) [HTML 1 KB] [PDF 1009 KB] (337)
125202 Qian Mu-Yang (钱沐杨), Yang Cong-Ying (杨从影), Liu San-Qiu (刘三秋), Wang Zhen-Dong (王震东), Lv Yan (吕燕), Wang De-Zhen (王德真)
  A computational modeling study on the helium atmospheric pressure plasma needle discharge
    Chin. Phys. B   2015 Vol.24 (12): 125202-125202 [Abstract] (714) [HTML 1 KB] [PDF 955 KB] (368)
120307 Wang Le (王乐), Zhao Sheng-Mei (赵生妹), Gong Long-Yan (巩龙延), Cheng Wei-Wen (程维文)
  Free-space measurement-device-independent quantum-key-distribution protocol using decoy states with orbital angular momentum
    Chin. Phys. B   2015 Vol.24 (12): 120307-120307 [Abstract] (823) [HTML 1 KB] [PDF 309 KB] (501)
85201 Zhou Ren-Wu (周仁武), Zhang Xian-Hui (张先徽), Zong Zi-Chao (宗子超), Li Jun-Xiong (李俊雄), Yang Zhou-Bin (杨周斌), Liu Dong-Ping (刘东平), Yang Si-Ze (杨思泽)
  Reactive oxygen species in plasma against E. coli cells survival rate
    Chin. Phys. B   2015 Vol.24 (8): 85201-085201 [Abstract] (738) [HTML 1 KB] [PDF 848 KB] (601)
84213 Wang Huan-Xue (王欢雪), Liu Jian-Guo (刘建国), Zhang Tian-Shu (张天舒)
  Estimation of random errors for lidar based on noise scale factor
    Chin. Phys. B   2015 Vol.24 (8): 84213-084213 [Abstract] (714) [HTML 1 KB] [PDF 299 KB] (513)
78502 Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Zheng Pu-Yang (郑璞阳), Dong Zhao (董钊), Zhang Qian (张茜)
  Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
    Chin. Phys. B   2015 Vol.24 (7): 78502-078502 [Abstract] (778) [HTML 1 KB] [PDF 364 KB] (311)
77201 Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓)
  High performance trench MOS barrier Schottky diode with high-k gate oxide
    Chin. Phys. B   2015 Vol.24 (7): 77201-077201 [Abstract] (1098) [HTML 1 KB] [PDF 523 KB] (1177)
65203 Yan Wen (晏雯), Liu Fu-Cheng (刘福成), Sang Chao-Feng (桑超峰), Wang De-Zhen (王德真)
  Two-dimensional numerical study of an atmospheric pressurehelium plasma jet with dual-power electrode
    Chin. Phys. B   2015 Vol.24 (6): 65203-065203 [Abstract] (747) [HTML 1 KB] [PDF 5404 KB] (561)
48102 Abdollah Hajalilou, Mansor Hashim, Reza Ebrahimi-Kahrizsangi, Mohamad Taghi Masoudi
  Effect of milling atmosphere on structural and magnetic properties of Ni–Zn ferrite nanocrystalline
    Chin. Phys. B   2015 Vol.24 (4): 48102-048102 [Abstract] (592) [HTML 0 KB] [PDF 4090 KB] (476)
47303 Ma Jin-Rong (马金荣), Qiao Ming (乔明), Zhang Bo (张波)
  Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application
    Chin. Phys. B   2015 Vol.24 (4): 47303-047303 [Abstract] (803) [HTML 0 KB] [PDF 308 KB] (783)
47302 Morteza Charmi
  Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs
    Chin. Phys. B   2015 Vol.24 (4): 47302-047302 [Abstract] (671) [HTML 0 KB] [PDF 412 KB] (417)
38103 Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明)
  Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC
    Chin. Phys. B   2015 Vol.24 (3): 38103-038103 [Abstract] (781) [HTML 0 KB] [PDF 347 KB] (393)
38501 Wang Han (汪涵), Jin Xiang-Liang (金湘亮), Chen Chang-Ping (陈长平), Tian Man-Fang (田满芳), Zhu Ke-Han (朱柯翰)
  A novel integrated ultraviolet photodetector based on standard CMOS process
    Chin. Phys. B   2015 Vol.24 (3): 38501-038501 [Abstract] (617) [HTML 0 KB] [PDF 989 KB] (842)
25203 Chen Zhao-Quan (陈兆权), Yin Zhi-Xiang (殷志祥), Xia Guang-Qing (夏广庆), Hong Ling-Li (洪伶俐), Hu Ye-Lin (胡业林), Liu Ming-Hai (刘明海), Hu Xi-Wei (胡希伟), A. A. Kudryavtsev
  Pulsed microwave-driven argon plasma jet with distinctive plume patterns resonantly excited by surface plasmon polaritons
    Chin. Phys. B   2015 Vol.24 (2): 25203-025203 [Abstract] (704) [HTML 0 KB] [PDF 1868 KB] (741)
128502 Chen Hai-Feng (陈海峰)
  Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor
    Chin. Phys. B   2014 Vol.23 (12): 128502-128502 [Abstract] (575) [HTML 1 KB] [PDF 368 KB] (403)
124215 Cao Chen (曹琛), Zhang Bing (张冰), Wu Long-Sheng (吴龙胜), Li Na (李娜), Wang Jun-Feng (王俊峰)
  A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure
    Chin. Phys. B   2014 Vol.23 (12): 124215-124215 [Abstract] (642) [HTML 1 KB] [PDF 594 KB] (486)
128501 Hu Xia-Rong (胡夏融), Lü Rui (吕瑞)
  An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS
    Chin. Phys. B   2014 Vol.23 (12): 128501-128501 [Abstract] (632) [HTML 1 KB] [PDF 325 KB] (382)
118505 Shweta Tripathi
  A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
    Chin. Phys. B   2014 Vol.23 (11): 118505-118505 [Abstract] (645) [HTML 1 KB] [PDF 332 KB] (437)
106801 Tao Peng (陶鹏), Guo Huai-Hong (郭怀红), Yang Teng (杨腾), Zhang Zhi-Dong (张志东)
  Stacking stability of MoS2 bilayer: An ab initio study
    Chin. Phys. B   2014 Vol.23 (10): 106801-106801 [Abstract] (976) [HTML 1 KB] [PDF 1304 KB] (1114)
94202 Wang Li-Guo (王利国), Wu Zhen-Sen (吴振森), Wang Ming-Jun (王明军), Cao Yun-Hua (曹运华), Zhang Geng (张耿)
  Scattering of a general partially coherent beam from a diffuse target in atmospheric turbulence
    Chin. Phys. B   2014 Vol.23 (9): 94202-094202 [Abstract] (538) [HTML 1 KB] [PDF 381 KB] (365)
90702 Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞)
  Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs
    Chin. Phys. B   2014 Vol.23 (9): 90702-090702 [Abstract] (566) [HTML 1 KB] [PDF 531 KB] (1027)
94201 Sun Bin (孙斌), Hong Jin (洪津), Sun Xiao-Bing (孙晓兵)
  Solving the atmospheric scattering optical transfer function using the multi-coupled single scattering method
    Chin. Phys. B   2014 Vol.23 (9): 94201-094201 [Abstract] (742) [HTML 1 KB] [PDF 279 KB] (575)
77306 Luo Yin-Chun (罗尹春), Luo Xiao-Rong (罗小蓉), Hu Gang-Yi (胡刚毅), Fan Yuan-Hang (范远航), Li Peng-Cheng (李鹏程), Wei Jie (魏杰), Tan Qiao (谭桥), Zhang Bo (张波)
  A low specific on-resistance SOI LDMOS with a novel junction field plate
    Chin. Phys. B   2014 Vol.23 (7): 77306-077306 [Abstract] (886) [HTML 1 KB] [PDF 451 KB] (557)
74202 Li Ya-Qing (李亚清), Wu Zhen-Sen (吴振森), Zhang Yuan-Yuan (张元元), Wang Ming-Jun (王明军)
  Scintillation of partially coherent Gaussian-Schell model beam propagation in slant atmospheric turbulence considering inner- and outer-scale effects
    Chin. Phys. B   2014 Vol.23 (7): 74202-074202 [Abstract] (594) [HTML 1 KB] [PDF 1990 KB] (831)
77307 Chen Wan-Jun (陈万军), Sun Rui-Ze (孙瑞泽), Peng Chao-Fei (彭朝飞), Zhang Bo (张波)
  High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications
    Chin. Phys. B   2014 Vol.23 (7): 77307-077307 [Abstract] (602) [HTML 1 KB] [PDF 870 KB] (704)
78401 Zhu Si-Heng (朱思衡), Si Li-Ming (司黎明), Guo Chao (郭超), Shi Jun-Yu (史君宇), Zhu Wei-Ren (朱卫仁)
  Hybrid phase-locked loop with fast locking time and low spur in a 0.18-μm CMOS process
    Chin. Phys. B   2014 Vol.23 (7): 78401-078401 [Abstract] (599) [HTML 1 KB] [PDF 723 KB] (948)
64216 Li Ya-Qing (李亚清), Wu Zhen-Sen (吴振森), Wang Ming-Jun (王明军)
  Partially coherent Gaussian-Schell model pulse beam propagation in slant atmospheric turbulence
    Chin. Phys. B   2014 Vol.23 (6): 64216-064216 [Abstract] (804) [HTML 1 KB] [PDF 468 KB] (415)
67701 Lin Meng (林猛), An Xia (安霞), Li Ming (黎明), Yun Quan-Xin (云全新), Li Min (李敏), Li Zhi-Qiang (李志强), Liu Peng-Qiang (刘朋强), Zhang Xing (张兴), Huang Ru (黄如)
  Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
    Chin. Phys. B   2014 Vol.23 (6): 67701-067701 [Abstract] (532) [HTML 1 KB] [PDF 410 KB] (713)
64219 Li Xu-You (李绪友), Sun Bo (孙波), Yu Ying-Ying (于莹莹)
  Reverse electric field Monte Carlo simulation for vector radiative transfer in the atmosphere
    Chin. Phys. B   2014 Vol.23 (6): 64219-064219 [Abstract] (787) [HTML 1 KB] [PDF 333 KB] (487)
68102 Zhang Jin-Feng (张金风), Nie Yu-Hu (聂玉虎), Zhou Yong-Bo (周勇波), Tian Kun (田坤), Ha Wei (哈微), Xiao Ming (肖明), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
  Depth-dependent mosaic tilt and twist in GaN epilayer:An approximate evaluation
    Chin. Phys. B   2014 Vol.23 (6): 68102-068102 [Abstract] (538) [HTML 1 KB] [PDF 399 KB] (747)
64205 Liu Qiang (刘强), Huang Hong-Hua (黄宏华), Wang Yao (王尧), Wang Gui-Shi (王贵师), Cao Zhen-Song (曹振松), Liu Kun (刘锟), Chen Wei-Dong (陈卫东), Gao Xiao-Ming (高晓明)
  Multi-wavelength measurements of aerosol optical absorption coefficients using a photoacoustic spectrometer
    Chin. Phys. B   2014 Vol.23 (6): 64205-064205 [Abstract] (641) [HTML 1 KB] [PDF 1232 KB] (383)
57304 Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
  Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
    Chin. Phys. B   2014 Vol.23 (5): 57304-057304 [Abstract] (580) [HTML 1 KB] [PDF 303 KB] (395)
47307 Li Xin-Mei (李新梅), Long Meng-Qiu (龙孟秋), Cui Li-Ling (崔丽玲), Xiao Jin (肖金), Xu Hui (徐慧)
  Electronic and transport properties of V-shaped defect zigzag MoS2 nanoribbons
    Chin. Phys. B   2014 Vol.23 (4): 47307-047307 [Abstract] (597) [HTML 1 KB] [PDF 653 KB] (735)
38503 Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基)
  Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer
    Chin. Phys. B   2014 Vol.23 (3): 38503-038503 [Abstract] (551) [HTML 1 KB] [PDF 749 KB] (620)
38502 Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚)
  A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs
    Chin. Phys. B   2014 Vol.23 (3): 38502-038502 [Abstract] (510) [HTML 1 KB] [PDF 514 KB] (498)
18501 Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚)
  Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
    Chin. Phys. B   2014 Vol.23 (1): 18501-018501 [Abstract] (586) [HTML 1 KB] [PDF 358 KB] (564)
17201 Guo Huai-Hong (郭怀红), Yang Teng (杨腾), Tao Peng (陶鹏), Zhang Zhi-Dong (张志东)
  Theoretical study of thermoelectric properties of MoS2
    Chin. Phys. B   2014 Vol.23 (1): 17201-017201 [Abstract] (1176) [HTML 1 KB] [PDF 882 KB] (1612)
115206 Chen Guang-Liang (陈光良), Zheng Xu (郑旭), Huang Jun (黄俊), Si Xiao-Lei (司晓蕾), Chen Zhi-Li (陈致力), Xue Fei (薛飞), Sylvain Massey
  Three different low-temperature plasma-based methods for hydrophilicity improvement of polyethylene films at atmospheric pressure
    Chin. Phys. B   2013 Vol.22 (11): 115206-115206 [Abstract] (556) [HTML 1 KB] [PDF 1766 KB] (497)
107302 Xue Bai-Qing (薛百清), Wang Sheng-Kai (王盛凯), Han Le (韩乐), Chang Hu-Dong (常虎东), Sun Bing (孙兵), Zhao Wei (赵威), Liu Hong-Gang (刘洪刚)
  High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation
    Chin. Phys. B   2013 Vol.22 (10): 107302-107302 [Abstract] (574) [HTML 1 KB] [PDF 502 KB] (628)
98505 Wang Xin-Ran (王欣然), Shi Yi (施毅), Zhang Rong (张荣)
  Field-effect transistors based on two-dimensional materials for logic applications
    Chin. Phys. B   2013 Vol.22 (9): 98505-098505 [Abstract] (753) [HTML 1 KB] [PDF 3245 KB] (3795)
98502 Zahra Ahangari, Morteza Fathipour
  Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET
    Chin. Phys. B   2013 Vol.22 (9): 98502-098502 [Abstract] (640) [HTML 1 KB] [PDF 838 KB] (639)
97301 Zhu Shu-Yan (朱述炎), Xu Jing-Ping (徐静平), Wang Li-Sheng (汪礼胜), Huang Yuan (黄苑)
  Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer
    Chin. Phys. B   2013 Vol.22 (9): 97301-097301 [Abstract] (637) [HTML 1 KB] [PDF 271 KB] (555)
67306 Zhou Kun (周坤), Luo Xiao-Rong (罗小蓉), Fan Yuan-Hang (范远航), Luo Yin-Chun (罗尹春), Hu Xia-Rong (胡夏融), Zhang Bo (张波)
  A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS
    Chin. Phys. B   2013 Vol.22 (6): 67306-067306 [Abstract] (762) [HTML 1 KB] [PDF 938 KB] (786)
78501 Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚)
  Lead zirconate titanate behaviors in LDMOS
    Chin. Phys. B   2013 Vol.22 (7): 78501-078501 [Abstract] (543) [HTML 1 KB] [PDF 439 KB] (479)
68103 Zhang Hui (张辉), Jiang Guo-Zhu (蒋国珠), Liu Zhao-Qun (刘朝群), Zhang Shu-Yi (张淑仪), Fan Li (范理)
  Effects of ramp vibrational states on flexural intrinsic vibrations in Besocke-style scanners
    Chin. Phys. B   2013 Vol.22 (6): 68103-068103 [Abstract] (632) [HTML 1 KB] [PDF 295 KB] (378)
50204 Liu Ping (刘萍), Li Zi-Liang (李子良)
  Exact solutions of (3+1)-dimensional nonlinear incompressible non-hydrostatic Boussinesq equations
    Chin. Phys. B   2013 Vol.22 (5): 50204-050204 [Abstract] (657) [HTML 1 KB] [PDF 279 KB] (664)
47304 Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Kai (张凯), Zhang Yue (张月), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)
  Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
    Chin. Phys. B   2013 Vol.22 (4): 47304-047304 [Abstract] (880) [HTML 1 KB] [PDF 320 KB] (894)
47303 H. M. Baran, A. Tataroğlu
  Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements
    Chin. Phys. B   2013 Vol.22 (4): 47303-047303 [Abstract] (668) [HTML 1 KB] [PDF 884 KB] (1923)
36103 Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟)
  Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films
    Chin. Phys. B   2013 Vol.22 (3): 36103-036103 [Abstract] (827) [HTML 0 KB] [PDF 523 KB] (641)
27302 Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Han Ji-Sheng (韩吉胜), Philip Tanner, Sima Dimitrijev, Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Guo Hui (郭辉)
  The fabrication and characterization of 4H SiC power UMOSFETs
    Chin. Phys. B   2013 Vol.22 (2): 27302-027302 [Abstract] (1125) [HTML 1 KB] [PDF 441 KB] (1568)
28503 Wang Bin (王斌), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Zhang Yu-Ming (张玉明), Zhou Chun-Yu (周春宇), Wang Guan-Yu (王冠宇), Li Yu-Chen (李妤晨 )
  Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET
    Chin. Phys. B   2013 Vol.22 (2): 28503-028503 [Abstract] (835) [HTML 1 KB] [PDF 390 KB] (1312)
27304 Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤)
  A low specific on-resistance SOI MOSFET with dual gates and recessed drain
    Chin. Phys. B   2013 Vol.22 (2): 27304-027304 [Abstract] (911) [HTML 1 KB] [PDF 684 KB] (743)
114211 Wang Yang (王杨), Li Ang (李昂), Xie Pin-Hua (谢品华), Zeng Yi (曾议), Wang Rui-Bin (王瑞斌), Chen Hao (陈浩), Pei Xian (裴显), Liu Jian-Guo (刘建国), and Liu Wen-Qing (刘文清 )
  Measurements of NO2 mixing ratios with topographic target light scattering-differential optical absorption spectroscopy system and comparisons to point monitoring technique
    Chin. Phys. B   2012 Vol.21 (11): 114211-114211 [Abstract] (1187) [HTML 1 KB] [PDF 206 KB] (608)
118501 Zhao Kai (赵凯), Christoph Jungemann, Liu Xiao-Yan (刘晓彦 )
  Deterministic method study of the impact of the Pauli Principle in double-gate MOSFETs
    Chin. Phys. B   2012 Vol.21 (11): 118501-118501 [Abstract] (1114) [HTML 1 KB] [PDF 274 KB] (480)
109203 Qian Zhong-Hua (钱忠华), Hu Jing-Guo (胡经国), Feng Guo-Lin (封国林), Cao Yong-Zhong (曹永忠)
  Characteristics of the spatiotemporal distribution of daily extreme temperature events in China: Minimum temperature records in different climate states against the background of the most probable temperature
    Chin. Phys. B   2012 Vol.21 (10): 109203-109203 [Abstract] (1038) [HTML 1 KB] [PDF 2182 KB] (590)
94202 Qian Xian-Mei (钱仙妹), Zhu Wen-Yue (朱文越), Rao Rui-Zhong (饶瑞中)
  Long-distance propagation of pseudo-partially coherent Gaussian Schell-model beams in atmospheric turbulence
    Chin. Phys. B   2012 Vol.21 (9): 94202-094202 [Abstract] (1382) [HTML 1 KB] [PDF 225 KB] (714)
83302 Zhang Hui (张辉), Zhang Shu-Yi (张淑仪), Fan Li (范理)
  Flexural resonance vibrations of piezoelectric ceramic tubes in Besocke-style scanners
    Chin. Phys. B   2012 Vol.21 (8): 83302-083302 [Abstract] (1221) [HTML 1 KB] [PDF 472 KB] (566)
84203 Fang Gui-Juan (方桂娟), Pu Ji-Xiong (蒲继雄)
  Propagation properties of stochastic electromagnetic double-vortex beams in turbulent atmosphere
    Chin. Phys. B   2012 Vol.21 (8): 84203-084203 [Abstract] (1387) [HTML 1 KB] [PDF 2762 KB] (654)
75204 Li Xue-Chen(李雪辰), Niu Dong-Ying(牛东莹), Xu Long-Fei(许龙飞), Jia Peng-Ying(贾鹏英), and Chang Yuan-Yuan(常媛媛)
  Simulation of transition from Townsend mode to glow discharge mode in a helium dielectric barrier discharge at atmospheric pressure
    Chin. Phys. B   2012 Vol.21 (7): 75204-075204 [Abstract] (1490) [HTML 1 KB] [PDF 221 KB] (950)
78502 Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基)
  A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
    Chin. Phys. B   2012 Vol.21 (7): 78502-078502 [Abstract] (1496) [HTML 1 KB] [PDF 152 KB] (1046)
76104 He Jin(何进), Su Yan-Mei(苏艳梅), Ma Yu-Tao (马玉涛), Chen Qin(陈沁), Wang Ruo-Nan(王若楠), Ye Yun(叶韵), Ma Yong(马勇), and Liang Hai-Lang(梁海浪)
  A nano-metallic-particles-based CMOS image sensor for DNA detection
    Chin. Phys. B   2012 Vol.21 (7): 76104-076104 [Abstract] (1582) [HTML 1 KB] [PDF 4571 KB] (1524)
68503 Wang Ying(王颖), Lan Hao(兰昊), Cao Fei(曹菲), Liu Yun-Tao(刘云涛), and Shao Lei(邵雷)
  A novel power UMOSFET with a variable K dielectric layer
    Chin. Phys. B   2012 Vol.21 (6): 68503-068503 [Abstract] (1490) [HTML 1 KB] [PDF 552 KB] (808)
67306 Liang Shuang(梁爽), Mei Zeng-Xia(梅增霞), and Du Xiao-Long(杜小龙)
  Modulation of electrical and optical properties of gallium-doped ZnO films by radio frequency magnetron sputtering
    Chin. Phys. B   2012 Vol.21 (6): 67306-067306 [Abstract] (1385) [HTML 1 KB] [PDF 232 KB] (633)
57305 Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌)
  The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics
    Chin. Phys. B   2012 Vol.21 (5): 57305-057305 [Abstract] (1560) [HTML 1 KB] [PDF 245 KB] (1092)
54203 Li Ya-Qing(李亚清) and Wu Zhen-Sen(吴振森)
  Characteristics of a partially coherent Gaussian Schell-model beam propagating in slanted atmospheric turbulence
    Chin. Phys. B   2012 Vol.21 (5): 54203-054203 [Abstract] (1717) [HTML 1 KB] [PDF 363 KB] (1052)
37201 Xue Hui-Jie(薛惠杰), LŰ Tian-Quan(吕天全), Zhang Hong-Chen(张红晨), Yin Hai-Tao(尹海涛), Cui Lian(催莲), and He Ze-Long(贺泽龙)
  Thermospin effects in parallel coupled double quantum dots in the presence of the Rashba spin–orbit interaction and Zeeman splitting
    Chin. Phys. B   2012 Vol.21 (3): 37201-037201 [Abstract] (1415) [HTML 1 KB] [PDF 548 KB] (786)
48502 Ren Min(任敏), Li Ze-Hong(李泽宏), Deng Guang-Min(邓光敏), Zhang Ling-Xia(张灵霞), Zhang Meng(张蒙), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), and Zhang Bo(张波)
  A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching
    Chin. Phys. B   2012 Vol.21 (4): 48502-048502 [Abstract] (1549) [HTML 1 KB] [PDF 470 KB] (2727)
29301 Sheng Zheng(盛峥) and Fang Han-Xian(方涵先)
  Inversion for atmosphere duct parameters using real radar sea clutter
    Chin. Phys. B   2012 Vol.21 (2): 29301-029301 [Abstract] (1116) [HTML 1 KB] [PDF 1396 KB] (729)
97304 Zhou Xing-Ye(周幸叶), Zhang Jian(张健), Zhou Zhi-Ze(周致赜), Zhang Li-Ning(张立宁), Ma Chen-Yue(马晨月), Wu Wen(吴文), Zhao Wei(赵巍), and Zhang Xing(张兴)
  An improvement to computational efficiency of the drain current model for double-gate MOSFET
    Chin. Phys. B   2011 Vol.20 (9): 97304-097304 [Abstract] (1516) [HTML 1 KB] [PDF 371 KB] (940)
90401 Cao Xiao-Qun(曹小群), Song Jun-Qiang(宋君强), Zhang Wei-Min(张卫民), and Zhao Jun(赵军)
  Variational principles for two kinds of extended Korteweg–de Vries equations
    Chin. Phys. B   2011 Vol.20 (9): 90401-090401 [Abstract] (1460) [HTML 0 KB] [PDF 93 KB] (862)
65206 Zhou Lan(周澜), Lü Guo-Hua(吕国华), Chen Wei(陈维), Pang Hua(庞华), Zhang Gu-Ling(张谷令), and Yang Si-Ze(杨思泽)
  Surface modification of polytetrafluoroethylene film using single liquid electrode atmospheric- pressure glow discharge
    Chin. Phys. B   2011 Vol.20 (6): 65206-065206 [Abstract] (1583) [HTML 1 KB] [PDF 3789 KB] (1306)
44201 Zhao Yan-Zhong(赵延仲), Sun Hua-Yan(孙华燕), and Song Feng-Hua(宋丰华)
  Double-distance propagation of Gaussian beams passing through a tilted cat-eye optical lens in a turbulent atmosphere
    Chin. Phys. B   2011 Vol.20 (4): 44201-044201 [Abstract] (1488) [HTML 0 KB] [PDF 5122 KB] (1304)
114220 Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰)
  Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs
    Chin. Phys. B   2011 Vol.20 (11): 114220-114220 [Abstract] (1292) [HTML 0 KB] [PDF 3380 KB] (732)
17301 Liu Hong-Xia(刘红侠), Li Jin(李劲),Li Bin(李斌), Cao Lei(曹磊),and Yuan Bo(袁博)
  Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs
    Chin. Phys. B   2011 Vol.20 (1): 17301-017301 [Abstract] (1624) [HTML 0 KB] [PDF 935 KB] (1327)
17203 Mao Wei(毛维), Yang Cui(杨翠), Hao Yao(郝跃), Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Wang Chong(王冲), Yang Lin-An(杨林安), Zhang Jin-Feng(张金风), and Kuang Xian-Wei(匡贤伟)
  Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT
    Chin. Phys. B   2011 Vol.20 (1): 17203-017203 [Abstract] (1953) [HTML 0 KB] [PDF 823 KB] (1657)
16102 He Jin(何进), Liu Feng(刘峰), Zhou Xing-Ye(周幸叶), Zhang Jian(张健), and Zhang Li-Ning(张立宁)
  A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
    Chin. Phys. B   2011 Vol.20 (1): 16102-016102 [Abstract] (1687) [HTML 1 KB] [PDF 589 KB] (1354)
99201 Li Jin-Hong(李晋红), Zhang Hong-Run(张洪润), and Lü Bai-Da(吕百达)
  Propagation of partially coherent beams carrying an edge dislocation through atmospheric turbulence along a slant path
    Chin. Phys. B   2010 Vol.19 (9): 99201-099201 [Abstract] (1406) [HTML 1 KB] [PDF 1180 KB] (737)
97306 Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超)
  The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors
    Chin. Phys. B   2010 Vol.19 (9): 97306-097306 [Abstract] (1621) [HTML 1 KB] [PDF 785 KB] (754)
89201 Pu Ji-Xiong(蒲继雄), Wang Tao(王涛), Lin Hui-Chuan(林惠川), and Li Cheng-Liang(李成良)
  Propagation of cylindrical vector beams in a turbulent atmosphere
    Chin. Phys. B   2010 Vol.19 (8): 89201-089201 [Abstract] (1956) [HTML 0 KB] [PDF 202 KB] (827)
76804 Guo Xi (郭希), Wang Yu-Tian (王玉田), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Wang Hui (王辉), Zhang Shu-Ming (张书明), Qiu Yong-Xin (邱永鑫), Xu Ke (徐科), Yang Hui (杨辉)
  Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
    Chin. Phys. B   2010 Vol.19 (7): 76804-076804 [Abstract] (1777) [HTML 1 KB] [PDF 803 KB] (2826)
67304 Zhang Jian(张健), He Jin(何进), and Zhang Li-Ning(张立宁)
  One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
    Chin. Phys. B   2010 Vol.19 (6): 67304-067304 [Abstract] (1687) [HTML 1 KB] [PDF 367 KB] (679)
60702 Mu Ting-Kui(穆廷魁) and Zhang Chun-Min(张淳民)
  A novel polarization interferometer for measuring upper atmospheric winds
    Chin. Phys. B   2010 Vol.19 (6): 60702-060702 [Abstract] (1567) [HTML 1 KB] [PDF 969 KB] (877)
57304 Du Gang(杜刚), Liu Xiao-Yan(刘晓彦), Xia Zhi-Liang(夏志良), Yang Jing-Feng(杨竞峰), and Han Ru-Qi(韩汝琦)
  Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method
    Chin. Phys. B   2010 Vol.19 (5): 57304-057304 [Abstract] (1535) [HTML 1 KB] [PDF 289 KB] (663)
56103 Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭)
  Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons
    Chin. Phys. B   2010 Vol.19 (5): 56103-056103 [Abstract] (1240) [HTML 1 KB] [PDF 2089 KB] (1100)
47306 Zhang Li-Ning(张立宁), He Jin(何进), Zhou Wang(周旺), Chen Lin(陈林), and Xu Yi-Wen(徐艺文)
  An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor
    Chin. Phys. B   2010 Vol.19 (4): 47306-47306 [Abstract] (1528) [HTML 0 KB] [PDF 687 KB] (1021)
47204 Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门)
  Study of a 4H-SiC epitaxial n-channel MOSFET
    Chin. Phys. B   2010 Vol.19 (4): 47204-047204 [Abstract] (1446) [HTML 1 KB] [PDF 115 KB] (756)
37201 Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊)
  Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs
    Chin. Phys. B   2010 Vol.19 (3): 37201-037201 [Abstract] (1780) [HTML 1 KB] [PDF 345 KB] (959)
30302 Liu Chang(刘畅), Chang Peng(常鹏), Liu Shi-Xing(刘世兴), and Guo Yong-Xin(郭永新)
  Decomposition of almost-Poisson structure of generalised Chaplygin's nonholonomic systems
    Chin. Phys. B   2010 Vol.19 (3): 30302-030302 [Abstract] (1774) [HTML 1 KB] [PDF 97 KB] (599)
20509 Wu Shu-Hua(吴淑花), Hao Jian-Hong(郝建红), and Xu Hai-Bo(许海波)
  Controlling chaos to unstable periodic orbits and equilibrium state solutions for the coupled dynamos system
    Chin. Phys. B   2010 Vol.19 (2): 20509-020509 [Abstract] (1723) [HTML 1 KB] [PDF 250 KB] (782)
117309 Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌)
  An analytical threshold voltage model for dual-strained channel PMOSFET
    Chin. Phys. B   2010 Vol.19 (11): 117309-117309 [Abstract] (1248) [HTML 0 KB] [PDF 694 KB] (892)
117307 Xue Shou-Bin(薛守斌), Huang Ru(黄如), Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴)
  Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation
    Chin. Phys. B   2010 Vol.19 (11): 117307-117307 [Abstract] (1686) [HTML 1 KB] [PDF 2091 KB] (999)
107302 Li Jin(李劲), Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博)
  Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs
    Chin. Phys. B   2010 Vol.19 (10): 107302-107302 [Abstract] (1443) [HTML 1 KB] [PDF 754 KB] (1044)
107301 Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博)
  The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
    Chin. Phys. B   2010 Vol.19 (10): 107301-107301 [Abstract] (1421) [HTML 1 KB] [PDF 873 KB] (711)
105203 Deng San-Xi(邓三喜),Cheng Cheng(程诚), Ni Guo-Hua(倪国华), Meng Yue-Dong(孟月东), and Chen Hua(陈华)
  The interaction of an atmospheric pressure plasma jet using argon or argon plus hydrogen peroxide vapour addition with bacillus subtilis
    Chin. Phys. B   2010 Vol.19 (10): 105203-105203 [Abstract] (1324) [HTML 1 KB] [PDF 1953 KB] (1323)
1413 Zheng Na(郑娜), Ding Yi(丁毅), Zhong Chun-Lai(钟春来), Chen Jin-Xiang(陈金象), and Fan Tie-Shuan(樊铁栓)
  Analysis of prompt fission neutron spectrum and multiplicity for 237Np(n, f) in the frame of multi-modal Los Alamos model
    Chin. Phys. B   2009 Vol.18 (4): 1413-1420 [Abstract] (1344) [HTML 1 KB] [PDF 269 KB] (636)
1380 Huang Zhi-Fu(黄志福), Ou Cong-Jie(欧聪杰), and Chen Jin-Can(陈金灿)
  Nonextensive and extensive thermostatistic properties of Fermi systems trapped in different external potentials
    Chin. Phys. B   2009 Vol.18 (4): 1380-1388 [Abstract] (1640) [HTML 1 KB] [PDF 417 KB] (607)
1231 Wang Cai-Lin(王彩琳) and Sun Jun(孙军)
  An oxide filled extended trench gate super junction MOSFET structure
    Chin. Phys. B   2009 Vol.18 (3): 1231-1236 [Abstract] (1341) [HTML 1 KB] [PDF 788 KB] (2084)
1033 Chen Bao-Suan(陈宝算) and Pu Ji-Xiong(蒲继雄)
  Propagation of Gauss--Bessel beams in turbulent atmosphere
    Chin. Phys. B   2009 Vol.18 (3): 1033-1039 [Abstract] (1269) [HTML 0 KB] [PDF 2018 KB] (935)
646 Lü Bo(吕博), Wang Xin-Xin(王新新), Luo Hai-Yun(罗海云), and Liang Zhuo(梁卓)
  Characterizing uniform discharge in atmospheric helium by numerical modelling
    Chin. Phys. B   2009 Vol.18 (2): 646-651 [Abstract] (1332) [HTML 1 KB] [PDF 1956 KB] (819)
581 Rao Rui-Zhong(饶瑞中)
  Scintillation index of optical wave propagating in turbulent atmosphere
    Chin. Phys. B   2009 Vol.18 (2): 581-587 [Abstract] (1376) [HTML 0 KB] [PDF 499 KB] (627)
571 Zhang En-Tao(张恩涛), Ji Xiao-Ling(季小玲), and Lü Bai-Da(吕百达)
  Propagation of the off-axis superposition of partially coherent beams through atmospheric turbulence
    Chin. Phys. B   2009 Vol.18 (2): 571-580 [Abstract] (1214) [HTML 1 KB] [PDF 1171 KB] (702)
5084 Huang Si-Xun (黄思训), Zhao Xiao-Feng (赵小峰), Sheng Zheng (盛峥)
  Refractivity estimation from radar sea clutter
    Chin. Phys. B   2009 Vol.18 (11): 5084-5090 [Abstract] (1844) [HTML 1 KB] [PDF 2016 KB] (1316)
2197 Wang Lian(王莲), Song Chong-Fu(宋崇富), Sun Jian-Qiu(孙剑秋), Hou Ying(侯莹), Li Xiao-Guang(李晓光), and Li Quan-Xin(李全新)
  Oxidation of silicon surface with atomic oxygen radical anions
    Chin. Phys. B   2008 Vol.17 (6): 2197-2203 [Abstract] (1685) [HTML 1 KB] [PDF 507 KB] (615)
1405 Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华)
  A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress
    Chin. Phys. B   2008 Vol.17 (4): 1405-1409 [Abstract] (1667) [HTML 1 KB] [PDF 291 KB] (900)
685 Hou Xiao-Yu(侯晓宇), Huang Ru(黄如), Chen Gang(陈刚), Liu Sheng(刘晟), Zhang Xing(张兴), Yu Bin(俞滨), and Wang Yang-Yuan(王阳元)
  A novel 10-nm physical gate length double-gate junction field effect transistor
    Chin. Phys. B   2008 Vol.17 (2): 685-689 [Abstract] (1537) [HTML 1 KB] [PDF 1132 KB] (573)
4312 Li Zun-Chao (李尊朝)
  Performance and analytical modelling of halo-doped surrounding gate MOSFETs
    Chin. Phys. B   2008 Vol.17 (11): 4312-4317 [Abstract] (1407) [HTML 1 KB] [PDF 1287 KB] (652)
4253 Li Rui (李 瑞), Hu Yuan-Zhong (胡元中), Wang Hui (王 慧), Zhang Yu-Jun (张宇军)
  Numerical distortion and effects of thermostat in molecular dynamics simulations of single-walled carbon nanotubes
    Chin. Phys. B   2008 Vol.17 (11): 4253-4259 [Abstract] (1361) [HTML 1 KB] [PDF 1935 KB] (831)
335 Zhao Pei-Tao(赵培涛), Zhang Yin-Chao(张寅超), Wang Lian(王莲), Hu Shun-Xing(胡顺星), Su Jia(苏嘉), Cao Kai-Fa(曹开法), Zhao Yue-Feng(赵曰峰), and Hu Huan-Ling(胡欢陵)
  Capability of Raman lidar for monitoring the variation of atmospheric CO2 profile
    Chin. Phys. B   2008 Vol.17 (1): 335-342 [Abstract] (1448) [HTML 1 KB] [PDF 275 KB] (577)
2486 Zhao Pei-Tao(赵培涛), Zhang Yin-Chao(张寅超), Wang Lian(王莲), Zhao Yue-Feng(赵曰峰), Su Jia(苏嘉), Fang Xin(方欣), Cao Kai-Fa(曹开法), Xie Jun(谢军), and Du Xiao-Yong(杜小勇)
  Analysis of influence of atmosphere extinction to Raman lidar monitoring CO2 concentration profile
    Chin. Phys. B   2007 Vol.16 (8): 2486-2491 [Abstract] (1286) [HTML 1 KB] [PDF 689 KB] (633)
2111 Liu Hong-Xia (刘红侠) and Hao Yue (郝跃)
  Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)
    Chin. Phys. B   2007 Vol.16 (7): 2111-2115 [Abstract] (1599) [HTML 1 KB] [PDF 462 KB] (903)
2033 Lin Jian-Zhong(林建忠), Li Hui-Jun(李惠君), and Zhang Kai(张凯)
  New expressions for the surface roughness length and displacement height in the atmospheric boundary layer
    Chin. Phys. B   2007 Vol.16 (7): 2033-2039 [Abstract] (1399) [HTML 1 KB] [PDF 661 KB] (597)
1757 Ji Feng (季峰), Xu Jing-Ping(徐静平), and Lai Pui-To (黎沛涛)
  A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
    Chin. Phys. B   2007 Vol.16 (6): 1757-1763 [Abstract] (1386) [HTML 1 KB] [PDF 509 KB] (595)
1743 Tian Yu(田豫), Huang Ru(黄如), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元)
  Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs
    Chin. Phys. B   2007 Vol.16 (6): 1743-1747 [Abstract] (1561) [HTML 0 KB] [PDF 509 KB] (580)
1445 Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃)
  Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress
    Chin. Phys. B   2007 Vol.16 (5): 1445-1449 [Abstract] (1493) [HTML 1 KB] [PDF 458 KB] (838)
1327 Ma Jing(马晶), Gao Chong(高宠), and Tan Li-Ying(谭立英)
  Angle-of-arrival fluctuations in moderate to strong turbulence
    Chin. Phys. B   2007 Vol.16 (5): 1327-1333 [Abstract] (1548) [HTML 1 KB] [PDF 279 KB] (650)
1089 Zhang Hong-Yan(张红艳), Wang De-Zhen(王德真), and Wang Xiao-Gang(王晓钢)
  Numerical studies of atmospheric pressure glow discharge controlled by a dielectric barrier between two coaxial electrodes
    Chin. Phys. B   2007 Vol.16 (4): 1089-1096 [Abstract] (1543) [HTML 0 KB] [PDF 230 KB] (759)
529 Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略)
  Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
    Chin. Phys. B   2007 Vol.16 (2): 529-532 [Abstract] (1508) [HTML 1 KB] [PDF 147 KB] (504)
485 Shang Wan-Li(尚万里), Wang De-Zhen(王德真), and Michael G. Kong
  Simulation of radio-frequency atmospheric pressure glow discharge in $\gamma$ mode
    Chin. Phys. B   2007 Vol.16 (2): 485-492 [Abstract] (1597) [HTML 1 KB] [PDF 306 KB] (699)
3820 Zhang Xue-Feng(张雪锋), Xu Jing-Ping (徐静平), Lai Pui-To(黎沛涛), Li Chun-Xia(李春霞), and Guan Jian-Guo(官建国)
  Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
    Chin. Phys. B   2007 Vol.16 (12): 3820-3826 [Abstract] (1399) [HTML 1 KB] [PDF 785 KB] (677)
3760 Li Dong-Mei(李冬梅), Wang Zhi-Hua(王志华), Huangfu Li-Ying(皇甫丽英), and Gou Qiu-Jing(勾秋静),
  Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology
    Chin. Phys. B   2007 Vol.16 (12): 3760-3765 [Abstract] (1445) [HTML 1 KB] [PDF 991 KB] (1724)
3754 Duan Bao-Xing(段宝兴), Zhang Bo(张波), and Li Zhao-Ji(李肇基)
  New CMOS compatible super junction LDMOST with n-type buried layer
    Chin. Phys. B   2007 Vol.16 (12): 3754-3759 [Abstract] (1442) [HTML 0 KB] [PDF 778 KB] (767)
3104 Li Rui(李睿), Yu Liu-Jiang(俞柳江), Dong Ye-Min(董业民), and Wang Ching-Dong(王庆东)
  Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices
    Chin. Phys. B   2007 Vol.16 (10): 3104-3107 [Abstract] (1708) [HTML 0 KB] [PDF 514 KB] (1959)
240 Li Ding-Yu(李定宇), Sun Lei(孙雷), Zhang Sheng-Dong (张盛东), Wang Yi(王漪), Liu Xiao-Yan(刘晓彦), and Han Ru-Qi(韩汝琦)
  Schottky barrier MOSFET structure with silicide source/drain on buried metal
    Chin. Phys. B   2007 Vol.16 (1): 240-244 [Abstract] (1938) [HTML 1 KB] [PDF 387 KB] (637)
2087 Zhu Tao(朱弢) and Wang Chong-Yu(王崇愚)
  Molecular dynamics study of mosaic structure in the Ni-based single-crystal superalloy
    Chin. Phys. B   2006 Vol.15 (9): 2087-2091 [Abstract] (1210) [HTML 1 KB] [PDF 548 KB] (797)
1544 Cheng Cheng (程诚), Liu Peng (刘鹏), Xu Lei (徐蕾), Zhang Li-Ye (张力叶), Zhan Ru-Juan (詹如娟), Zhang Wen-Rui (张文锐)
  Development of a new atmospheric pressure cold plasma jet generator and application in sterilization
    Chin. Phys. B   2006 Vol.15 (7): 1544-1548 [Abstract] (1734) [HTML 0 KB] [PDF 722 KB] (1363)
1339 Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英)
  Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel
    Chin. Phys. B   2006 Vol.15 (6): 1339-1345 [Abstract] (1843) [HTML 0 KB] [PDF 294 KB] (658)
645 Chen Hai-Feng (陈海峰), Hao Yue (郝跃), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进城), Li Kang (李康), Cao Yan-Rong (曹艳荣), Zhang Jin-Feng (张金凤), Zhou Peng-Ju (周鹏举)
  Investigation of the characteristics of GIDL current in 90nm CMOS technology
    Chin. Phys. B   2006 Vol.15 (3): 645-648 [Abstract] (1832) [HTML 0 KB] [PDF 304 KB] (1874)
631 Zhang Xiao-Ju (张晓菊), Gong Xin (龚欣), Wang Jun-Ping (王俊平), Hao Yue (郝跃)
  Analytical analysis of surface potential for grooved-gate MOSFET
    Chin. Phys. B   2006 Vol.15 (3): 631-635 [Abstract] (1534) [HTML 0 KB] [PDF 505 KB] (651)
2742 Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Wang Jian-Ping(王剑屏), Cao Yan-Rong(曹艳荣), and Chen Hai-Feng(陈海峰)
  New aspects of HCI test for ultra-short channel n-MOSFET devices
    Chin. Phys. B   2006 Vol.15 (11): 2742-2745 [Abstract] (1349) [HTML 0 KB] [PDF 181 KB] (739)
2688 Lin Jian-Zhong(林建忠), Zhang Kai(张凯), and Li Hui-Jun (李惠君)
  Study on the mixing of fluid in curved microchannelswith heterogeneous surface potentials
    Chin. Phys. B   2006 Vol.15 (11): 2688-2696 [Abstract] (1322) [HTML 1 KB] [PDF 497 KB] (534)
195 Ma Xiao-Hua (马晓华), Hao Yue (郝跃), Sun Bao-Gang (孙宝刚), Gao Hai-Xia (高海霞), Ren Hong-Xia (任红霞), Zhang Jin-Cheng (张进城), Zhang Jin-Feng (张金凤), Zhang Xiao-Ju (张晓菊), Zhang Wei-Dong (张卫东)
  Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process
    Chin. Phys. B   2006 Vol.15 (1): 195-198 [Abstract] (1405) [HTML 1 KB] [PDF 270 KB] (946)
1644 Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R.
  Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs
    Chin. Phys. B   2005 Vol.14 (8): 1644-1648 [Abstract] (1299) [HTML 1 KB] [PDF 252 KB] (506)
1418 Li Xue-Chen (李雪辰), Dong Li-Fang (董丽芳), Wang Long (王龙)
  Glow and pseudo-glow discharges in a surface discharge generator
    Chin. Phys. B   2005 Vol.14 (7): 1418-1422 [Abstract] (1231) [HTML 1 KB] [PDF 1001 KB] (501)
850 Dai Xin-Gang (戴新刚), Fu Cong-Bin (符淙斌), Wang Ping (汪萍)
  Interdecadal change of atmospheric stationary waves and North China drought
    Chin. Phys. B   2005 Vol.14 (4): 850-858 [Abstract] (1079) [HTML 1 KB] [PDF 555 KB] (543)
808 Ma Zhong-Fa (马仲发), Zhuang Yi-Qi (庄奕琪), Du Lei (杜磊), Wei Shan (魏珊)
  A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation
    Chin. Phys. B   2005 Vol.14 (4): 808-811 [Abstract] (1167) [HTML 1 KB] [PDF 215 KB] (590)
583 Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)
  6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension
    Chin. Phys. B   2005 Vol.14 (3): 583-585 [Abstract] (1154) [HTML 0 KB] [PDF 223 KB] (676)
565 Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦)
  Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET
    Chin. Phys. B   2005 Vol.14 (3): 565-570 [Abstract] (1294) [HTML 1 KB] [PDF 279 KB] (970)
1110 Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)
  Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs
    Chin. Phys. B   2004 Vol.13 (7): 1110-1113 [Abstract] (1158) [HTML 0 KB] [PDF 190 KB] (418)
1104 Yu Chun-Li (于春利), Yang Lin-An (杨林安), Hao Yue (郝跃)
  A compact I-V model for lightly-doped-drain MOSFETs
    Chin. Phys. B   2004 Vol.13 (7): 1104-1109 [Abstract] (1089) [HTML 1 KB] [PDF 264 KB] (413)
948 Zhang Guo-Qiang (张国强), Guo Qi (郭旗), Erkin (艾尔肯), Lu Wu (陆妩), Ren Di-Yuan (任迪远)
  A novel technique for predicting ionizing radiation effects of commercial MOS devices
    Chin. Phys. B   2004 Vol.13 (6): 948-953 [Abstract] (1141) [HTML 0 KB] [PDF 182 KB] (461)
413 Feng Guo-Lin (封国林), Dong Wen-Jie (董文杰), Jia Xiao-Jing (贾晓静)
  Application of retrospective time integration scheme to the prediction of torrential rain
    Chin. Phys. B   2004 Vol.13 (3): 413-422 [Abstract] (1176) [HTML 1 KB] [PDF 448 KB] (484)
190 Wang Shou-Guo (王守国), Li Hai-Jiang (李海江), Ye Tian-Chun (叶甜春), Zhao Ling-Li (赵玲利)
  Basic characteristics of an atmospheric pressure rf generated plasma jet
    Chin. Phys. B   2004 Vol.13 (2): 190-195 [Abstract] (1160) [HTML 1 KB] [PDF 241 KB] (537)
2174 Ouyang Jian-Ming (欧阳建明), Guo Wei (郭伟), Wang Long (王龙), Shao Fu-Qiu (邵福球)
  Numerical simulation of chemical processes in atmospheric plasmas
    Chin. Phys. B   2004 Vol.13 (12): 2174-2181 [Abstract] (986) [HTML 1 KB] [PDF 289 KB] (479)
1887 Wang Bao-Ling (王宝玲), Hu Li-Li (胡丽丽)
  Study of refractive index and thickness of TiO2/ormosil planar waveguide
    Chin. Phys. B   2004 Vol.13 (11): 1887-1891 [Abstract] (1251) [HTML 1 KB] [PDF 185 KB] (472)
1815 Tong Jian-Nong (童建农), Zou Xue-Cheng (邹雪城), Shen Xu-Bang (沈绪榜)
  Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET
    Chin. Phys. B   2004 Vol.13 (11): 1815-1819 [Abstract] (1165) [HTML 1 KB] [PDF 212 KB] (416)
1770 Wang Ping (汪萍), Dai Xin-Gang (戴新刚)
  Numerical solution of Helmholtz equation of barotropic atmosphere using wavelets
    Chin. Phys. B   2004 Vol.13 (10): 1770-1776 [Abstract] (1019) [HTML 1 KB] [PDF 366 KB] (395)
189 Ren Hong-xia (任红霞), Hao Yue (郝跃)
  HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS
    Chin. Phys. B   2001 Vol.10 (3): 189-193 [Abstract] (1134) [HTML 0 KB] [PDF 257 KB] (564)
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