High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

doi:10.1088/1674-1056/ab68c0

Abstract The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO₂/4H-SiC stack. By controlling the oxidation pressure, species, and temperature, the record low density of interface traps (~ 4×10¹⁰ cm^-2·eV^-1@E_c - 0.2 eV) is demonstrated on SiO₂/SiC stack formed by microwave plasma oxidation. And high quality SiO₂ with very flat interface (0.27-nm root-mean-square roughness) is obtained. High performance SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with peak field effect mobility of 44 cm^-2·eV^-1 is realized without additional treatment. These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.

Keywords: SiC plasma oxidation interface traps MOSFET

Received: 11 December 2019
Revised: 07 January 2020
Accepted manuscript online:

PACS:	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.50.Dn	(Low-field transport and mobility; piezoresistance)

Fund: Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Corresponding Authors: Xin-Yu Liu, Sheng-Kai Wang
E-mail: xyliu@ime.ac.cn;wangshengkai@ime.ac.cn

Cite this article:

Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯) High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation 2020 Chin. Phys. B 29 037301

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High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

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