Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Xu Jing-Ping(徐静平)a)†, Chen Wei-Bing(陈卫兵)a), Lai Pui-To(黎沛涛)b), Li Yan-Ping(李艳萍)a), and Chan Chu-Lok(陈铸略)b)
a Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China
Abstract Trichloroethylene (TCE) pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gate-dielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growth, the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and HCl on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.
Received: 06 June 2006
Revised: 23 August 2006
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60376019).
Cite this article:
Xu Jing-Ping(徐静平), Chen Wei-Bing(陈卫兵), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), and Chan Chu-Lok(陈铸略) Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment 2007 Chinese Physics 16 529
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